VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (MAGN-A-PAK Power Modules), 250 A to 320 A FEATURES High voltage Electrically isolated base plate 3000 V isolating voltage RMS Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Designed and qualified for industrial level MAGN-A-PAK Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY This VS-VSK series of MAGN-A-PAKs uses high voltage power diodes in two basic configurations. The I 250 A to 320 A F(AV) semiconductors are electrically isolated from the metal Type Modules - diode, high voltage base, allowing common heatsinks and compact assemblies Package MAGN-A-PAK to be built. They can be interconnected to form single phase Two diodes doubler circuit, or three phase bridges and the single diode module can be Circuit two diodes common cathode, used in conjunction with the thyristor modules as a configuration two diodes common anode, single diode freewheel diode. These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, etc.). MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VSK.250.. VSK.270.. VSK.320.. UNITS 250 270 320 A I F(AV) T 100 100 100 C C I 393 424 502 F(RMS) 50 Hz 7015 8920 10 110 A I FSM 60 Hz 7345 9430 10 580 50 Hz 246 398 511 2 2 I t kA s 60 Hz 225 363 466 2 2 I t 2460 3980 5110 kA s V 400 to 3000 V RRM T -40 to +150 C J Revision: 27-Apr-17 Document Number: 93581 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM, RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C CODE V V mA 04 400 500 08 800 900 VS-VSK.250 VS-VSK.270 12 1200 1300 50 VS-VSK.320 16 1600 1700 20 2000 2100 VS-VSK.270 30 3000 3100 FORWARD CONDUCTION VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS VSK.250 VSK.270 VSK.320 250 270 320 A Maximum average forward I 180 conduction, half sine wave F(AV) current at case temperature 100 100 100 C Maximum RMS forward current I As AC switch 393 424 502 F(RMS) t = 10 ms 7015 8920 10 110 No voltage reapplied t = 8.3 ms 7345 9340 10 580 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current 100 % t = 10 ms 5900 7500 8500 V RRM Sinusoidal half wave, t = 8.3 ms 6180 7850 8900 reapplied initial t = 10 ms 246 398 511 T = T maximum No voltage J J reapplied t = 8.3 ms 225 363 466 2 2 2 Maximum I t for fusing I t kA s 100 % t = 10 ms 174 281 361 V RRM t = 8.3 ms 159 257 330 reapplied 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 2460 3980 5110 kA s (16.7 % x x I < I < x I ), F(AV) F(AV) Low level value of threshold voltage V 0.79 0.74 0.69 F(TO)1 T = T maximum J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.92 0.87 0.86 F(TO)2 F(AV) J J < I < x I ), (16.7 % x x I F(AV) F(AV) Low level forward slope resistance r 0.63 0.94 0.59 f1 T = T maximum J J m High level forward slope resistance r (I > x I ), T = T maximum 0.49 0.81 0.44 f2 F(AV) J J I = x I , T = T maximum, 180 conduction FM F(AV) J J Maximum forward voltage drop V 1.29 1.48 1.28 V FM 2 Average power = V x I + r x (I ) F(TO) F(AV) f F(RMS) BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak reverse I T = 150 C 50 mA RRM J leakage current RMS insulation voltage V 50 Hz, circuit to base, all terminals shorted, t = 1 s 3000 V INS Revision: 27-Apr-17 Document Number: 93581 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000