X-On Electronics has gained recognition as a prominent supplier of VT60M45C-M3/4W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VT60M45C-M3/4W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VT60M45C-M3/4W Vishay

VT60M45C-M3/4W electronic component of Vishay
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Part No.VT60M45C-M3/4W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 60A,45V,TRENCH SKY RECT.
Datasheet: VT60M45C-M3/4W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 1.3225 ea
Line Total: USD 10580 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 8000
Multiples : 8000
8000 : USD 1.3225

   
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We are delighted to provide the VT60M45C-M3/4W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VT60M45C-M3/4W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VT60M45C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.32 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 2 TYPICAL APPLICATIONS 1 For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and VT60M45C reverse battery protection. PIN 1 PIN 2 CASE PIN 3 MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-M3 - halogen-free, RoHS-compliant, and I 2 x 30 A F(AV) commercial grade V 45 V RRM Terminals: matte tin plated leads, solderable per I 320 A J-STD-002 and JESD 22-B102 FSM M3 suffix meets JESD 201 class 1A whisker test V at I = 30 A (T = 125 C) 0.50 V F F A Polarity: as marked T max. 175 C J Mounting Torque: 10 in-lbs maximum Package TO-220AB Diode variations Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT60M45C UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 60 Maximum average forward rectified current (fig. 1) I F(AV) per diode 30 A Peak forward surge current 8.3 ms single half sine-wave I 320 FSM superimposed on rated load per diode Operating junction and storage temperature range T , T -40 to +175 C J STG Revision: 09-Nov-17 Document Number: 87782 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT60M45C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 5 A 0.45 - F I = 15 A T = 25 C 0.51 - F A I = 30 A 0.58 0.68 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.32 - F I = 15 A T = 125 C 0.41 - F A I = 30 A 0.50 0.60 F T = 25 C - 450 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 5.4 25 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT60M45CUNIT per diode 1.0 R JC (1) Typical thermal resistance per device 0.7 C/W (2) per device R 52 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT60M45C-M3/4W 1.89 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 70 22 D = 0.8 o D = 0.5 With heatsink, Rth = 0.7 C/W 20 JC 60 D = 0.3 18 D = 0.2 16 50 D = 1.0 D = 0.1 14 40 12 10 30 8 T 20 6 Free air, without heatsink, 4 10 o Rth = 52 C/W JA D = t /T t 2 p p 0 0 0 25 50 75 100 125 150 175 0 4 8 12 16 20 24 28 32 36 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode (D = Duty Cycle = 0.5) Revision: 09-Nov-17 Document Number: 87782 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Average Forward Rectified Current (A) Average Power Loss (W)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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