X-On Electronics has gained recognition as a prominent supplier of HS512K16-CQ128A103E SRAM across the USA, India, Europe, Australia, and various other global locations. HS512K16-CQ128A103E SRAM are a product manufactured by Vorago. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

HS512K16-CQ128A103E Vorago

HS512K16-CQ128A103E electronic component of Vorago
HS512K16-CQ128A103E Vorago
HS512K16-CQ128A103E SRAM
HS512K16-CQ128A103E  Semiconductors

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Part No. HS512K16-CQ128A103E
Manufacturer: Vorago
Category: SRAM
Description: SRAM 8M Dual Port Synchronous SRAM
Datasheet: HS512K16-CQ128A103E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the HS512K16-CQ128A103E from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HS512K16-CQ128A103E and other electronic components in the SRAM category and beyond.

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HS512K16 HS512K16 8Mb Radiation-Hardened Synchronous Dual-Port SRAM HS512K16 is a high performance synchronous Dual-Port SRAM organized as 524,288 words with 16-bit word. It can be configured as Master or Slave device. Master device can initiate autonomous scrub and demand scrub cycles on Slave device. True dual-port synchronous SRAM, 8Mb memory Selectable between Pipeline and Flow-Through modes Built-in EDAC (Error Detection and Correction) to mitigate soft errors Built-in Scrub Engine for autonomous correction Built-in Address counter for sequential memory access with repeat feature Dual chip enable allows depth and width expansion without additional logic Asynchronous Output Enable for each port Support various clock modes and stress test modes Direct read mode from data bits or parity bits for quick memory testing Cycle Time <20ns flow through mode, <15ns pipeline mode Access time <17ns flow through mode, <12ns pipeline mode Manufactured by TI at DMOS5 wafer fab 130nm CMOS generation with commercial layout rules 5 levels metal, with Cu , Al layers 8T DP SRAM cell CMOS compatible input and output level, three state bidirectional data bus 3.3 +/- 0.3V I/O, 1.5 +/- 0.15V CORE Radiation performance Manufactured by TI with SST 130nm RH process and selective circuit design hardening TID immunity > 300Krads (Si) SER < 1e-10 errors/bit-day geosynchronous orbit & solar minimum (with ECC/Scrub) Latch up immunity > LET = 110 MeV (T=125C) Packaging options: 128pin CQFP, Die Temperature options: -55C to 125C and -55C to 200C page 1 www.voragotech.com Rev 1.1 HS512K16 Figure 1: Block Diagram page 2 www.voragotech.com Rev 1.1

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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