BT137S-800E,118 WeEn Semiconductor

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses nxp.com use salesaddresses ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) NXP Semiconductors N.V. year . All rights reserved becomes WeEn Semiconductors Co., Ltd. year . All rights reserved If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses ween-semi.com). Thank you for your cooperation and understanding, WeEn SemiconductorsBT137S-800E 4Q Triac 12 June 2014 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT428 (DPAK) surface- mountable plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gateseries triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Direct triggering from low power drivers and logic ICs High blocking voltage capability Low holding current for low current loads and lowest EMI at commutation Planar passivated for voltage ruggedness and reliability Sensitive gate Surface-mountable package Triggering in all four quadrants 3. Applications General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 65 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p I RMS on-state current full sine wave T 102 C Fig. 1 - - 8 A T(RMS) mb Fig. 2 Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - 2.5 10 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - 4 10 mA D T T = 25 C Fig. 7 j Scan or click this QR code to view the latest information for this product DPAK