BTA208S-600D,118 WeEn Semiconductor

BTA208S-600D 3Q Hi-Com Triac 31 May 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. 2. Features and benefits 3Q technology for improved noise immunity Direct gate triggering from low power drivers and logic ICs High commutation capability High voltage capability Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only Very sensitve gate for easy logic level triggering 3. Applications Electronic thermostats General purpose motor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 102 C Fig. 1 - - 8 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 65 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 72 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 5 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 5 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA208S-600D 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- - - 5 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 15 mA H D j V on-state voltage I = 10 A T = 25 C Fig. 10 - - 1.65 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 110 C (V = 67% 20 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 8 A 6 - - A/ms com D j T(RMS) commutating current dV /dt = 0.1 V/s gate open circuit com V = 400 V T = 125 C I = 8 A 2 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA208S-600D DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BTA208S-600D All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 31 May 2018 2 / 13