BTA312B-600B,118 WeEn Semiconductor

BTA312B-600B 3Q Hi-Com Triac 2 July 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High voltage capability Less sensitive gate for highest noise immunity Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 100 C Fig. 1 - - 12 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 100 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 110 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 50 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA312B-600B 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 2 - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 - 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 60 mA H D j V on-state voltage I = 15 A T = 25 C Fig. 10 - 1.3 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 1000 2000 - V/s D DM j DM voltage of V ) exponential circuit gate open DRM circuit dI /dt rate of change of V = 400 V T = 125 C I = 12 A 30 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main 2 terminal 2 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA312B-600B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 SOT404 leads (one lead cropped) BTA312B-600B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 2 July 2018 2 / 13