C3D06060G
V = 600 V
RRM
Silicon Carbide Schottky Diode
I (T =135C) = 9.5 A
C
F
Z-Rec RRectifie
Q = 16 nC
c
Features Package
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on V
F
TO-263-2
Benefits
Replace Bipolar with Unipolar Rectifiers
PIN 1
Essentially No Switching Losses
CASE
Higher Efficiency
PIN 2
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
AEC-Q101 Qualified and PPAP Capable
Applications
Part Number Package Marking
Switch Mode Power Supplies
Power Factor Correction
C3D06060G TO-263-2 C3D06060
- Typical PFC P : 600W-1200W
out
Motor Drives
- Typical Power : 2HP-3HP
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
V Repetitive Peak Reverse Voltage 600 V
RRM
V Surge Peak Reverse Voltage 600 V
RSM
V DC Blocking Voltage 600 V
DC
20 T =25C
C
I Continuous Forward Current 9.5 A T =135C
F
C
6 T =155C
C
41 T =25C, t = 10 ms, Half Sine Wave, D=0.3
C P
I Repetitive Peak Forward Surge Current A
FRM
27 T =110C, t =10 ms, Half Sine Wave, D=0.3
C P
I 70 T =25C, t = 10 mS, Half Sine Wave, D=0.3
FSM C p
Non-Repetitive Peak Forward Surge Current A
55 T =110C, t = 10 mS, Half Sine Wave, D=0.3
C p
I Non-Repetitive Peak Forward Surge Current 200 A T =25C, t = 10 s, Pulse
FSM C P
91 T =25C
C
P Power Dissipation W
tot
39 T =110C
C
-55 to
T , T Operating Junction and Storage Temperature C
J stg
+175
1 C3D06060G Rev. FElectrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
1.6 1.8 I = 6 A T =25C
F J
V Forward Voltage V
F
1.9 2.4 I = 6 A T =175C
F J
10 50 V = 600 V T =25C
R J
I Reverse Current A
R
20 200 V = 600 V T =175C
R J
V = 600 V, I = 6A
R F
Q Total Capacitive Charge 16 nC di /dt = 500 A/ s
C
T = 25C
J
294 V = 0 V, T = 25C, f = 1 MHz
R J
C Total Capacitance 27 pF V = 200 V, T = 25C, f = 1 MHz
R J
26 V = 400 V, T = 25C, f = 1 MHz
R J
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit
R Thermal Resistance from Junction to Case 1.65 C/W
JC
Typical PerformanceForward Characteristics Reverse Characteristics
100
100
1212
TJ = 25C
90
11
90
T = 75C
J
10
10
80
T = 125C 80
J
T = 175C
J
9
70
70
88
60
60
7
50
50
6
6
T = 25C
40 J
40
5
T = 75C
J
30
30
44
TJ = 125C
TJ = 175C
3 20
20
2
2
10
10
1
0
0
0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0 0.5 1 1.5 2 2.5 3 V Reverse Voltage (V)
R
V Forward Voltage (V)
V Reverse Voltage (V)
F
V Forward Voltage (V)
R
F
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
2 C3D06060G Rev. F
I Forward Current (A)
F
I ForForwwaarrd d CCururrreent nt ((AA))
F
I Reverse Current ( A)
R
I RevRevererse se CuCurrrrenentt ((uuAA))
R