C3D10065I V = 650 V RRM Silicon Carbide Schottky Diode I (T =125C) = 10 A C F Z -Rec Rectifier Q = 24 nC c Features Package 650-Volt Schottky Rectifier Ceramic Package Provides 2.5kV Isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on V F TO-220 Isolated Benefits Electrically Isolated Package PIN 1 Essentially No Switching Losses CASE Higher Efficiency PIN 2 Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking HVAC Switch Mode Power Supplies (SMPS) C3D10065I Isolated TO-220-2 C3D10065I Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter Stages AC/DC converters Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V Surge Peak Reverse Voltage 650 V RSM V DC Blocking Voltage 650 V DC 19 T =25C C I Continuous Forward Current 10 A T =125C Fig. 3 F C 9 T =135C C 67 T =25C, t =10 ms, Half Sine Wave, D=0.3 C P I Repetitive Peak Forward Surge Current A FRM 44 T =110C, t =10 ms, Half Sine Wave, D=0.3 C P 90 T =25C, t =10ms, Half Sine Wave, D=0.3 C P I Non-Repetitive Peak Forward Surge Current A FSM 71 T =110C, t =10 ms, Half Sine Wave, D=0.3 C P 860 T =25C, t = 10 s, Pulse C P I Non-Repetitive Peak Forward Surge Current A F,Max 680 T =110C, t = 10 s, Pulse C P 60 T =25C C P Power Dissipation W Fig. 4 tot 26 T =110C C -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 Nm M3 Screw TO-220 Mounting Torque 6-32 Screw 8.8 lbf-in 1 C3D10065I Rev. D, 01-2016 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 10 A T =25C F J Fig. 1 V Forward Voltage V F 2.0 2.4 I = 10 A T =175C F J 12 60 V = 650 V T =25C R J Fig. 2 I Reverse Current A R 24 220 V = 650 V T =175C R J V = 400 V, I = 10 A R F Q Total Capacitive Charge 24 nC di /dt = 500 A/s C T = 25C J 460.5 V = 0 V, T = 25C, f = 1 MHz R J Fig. 4 C Total Capacitance 44 pF V = 200 V, T = 25C, f = 1 MHz R J 40 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 3.6 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 2.5 C/W Fig. 9 JC Typical Performance 100 30 90 T = -55 C J 25 80 T = 25 C J 70 20 T = 75 C J T = 175 C J 60 T = 125 C J T = 125 C J 15 50 T = 175 C J T = 75 C J 40 1010 TT == 25 25 CC J 30 T = -55 C J 20 5 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 100 200 300 400 500 600 700 800 900 1000 Foward Voltage, V (V) Reverse Voltage, V (V) V (V) V (V) F R F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D10065I Rev. D, 01-2016 FFoowwaarrdd CCurrurrenentt,, II (A) I (A) F F RReevveerrssee LLeeaakkaaggee CuCurrrreenntt,, II (mA) RR I ( mA) R