V 900 V DS C3M0120090J I 25C 22 A D R 120 m Silicon Carbide Power MOSFET DS(on) TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package TAB New C3M SiC MOSFET technology Drain High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Benefits Drain (TAB) 1 2 3 4 5 6 7 G KS S S S S S Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Gate (Pin 1) Applications Driver Power Source Source (Pin 2) (Pin 3,4,5,6,7) Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Lighting C3M0120090J TO-263-7 Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V = 0 V, I = 100 A V Drain - Source Voltage 900 V GS D DSmax Gate - Source Voltage -8/+19 V Absolute maximum values V GSmax Gate - Source Voltage -4/+15 V Recommended operational values Note (1) V GSop 22 Fig. 19 V = 15 V, T = 25C GS C Continuous Drain Current A I D 14 V = 15 V, T = 100C GS C Pulsed Drain Current 50 A Fig. 22 I Pulse width t limited by T D(pulse) jmax P P Power Dissipation 83 W T =25C, T = 150 C Fig. 20 C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 T Solder Temperature 260 C 1.6mm (0.063) from case for 10s L Note (1): MOSFET can also safely operate at 0/+15 V 1 C3M0120090J Rev. 2 10-2020Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.1 3.5 V VDS = VGS, ID = 3 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 3 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 120 155 VGS = 15 V, ID = 15 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 170 VGS = 15 V, ID = 15 A, TJ = 150C 8.9 V = 15 V, I = 15 A DS DS g Transconductance S Fig. 7 fs 7.1 V = 15 V, I = 15 A, T = 150C DS DS J Ciss Input Capacitance 414 Fig. 17, VGS = 0 V, VDS = 600 V C Output Capacitance 48 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 3 rss AC V = 25 mV E C Stored Energy 10.6 J Fig. 16 oss oss E Turn-On Switching Energy 32 ON V = 400 V, V = -4 V/15 V, I = 15 A, DS GS Fig. 26, D J 29 R = 2.5, L= 99 H, T = 150C J G(ext) E Turn Off Switching Energy 8 OFF td(on) Turn-On Delay Time 5 V = 400 V, V = -4 V/15 V DD GS tr Rise Time 8 I = 15 A, R = 2.5 , D G(ext) Fig. 27, ns Timing relative to V 29 DS t Turn-Off Delay Time 13 d(off) Inductive load t Fall Time 4 f , R Internal Gate Resistance 13 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 6 gs VDS = 400 V, VGS = -4 V/15 V Q Gate to Drain Charge 5 I = 15 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 18 (T = 25C unless otherwise specified) Reverse Diode Characteristics C Test Conditions Note Symbol Parameter Typ. Max. Unit 4.8 V V = -4 V, I = 7.5 A GS SD Fig. 8, 9, V Diode Forward Voltage SD 10 4.4 V V = -4 V, I = 7.5 A, T = 150 C GS SD J I Continuous Diode Forward Current 15 A V = -4 V Note (2) S GS I Diode pulse Current 50 A Note (2) S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recover time 10 ns rr V = -4 V, I = 15 A, V = 400 V GS SD R Note (2) Q Reverse Recovery Charge 72 nC rr dif/dt = 900 A/s, T = 150 C J I Peak Reverse Recovery Current 12 A rrm Note (2): When using SiC Body Diode the maximum recommended V = -4V GS Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 1.5 JC C/W Fig. 21 RJA Thermal Resistance From Junction to Ambient 40 2 C3M0120090J Rev. 2 10-2020