C4D40120H th 4 Generation 1200 V, 40 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application 1 2 demands, without concern of thermal runaway. In combination PIN 1 with the reduced cooling requirements and improved thermal CASE performance of SiC products, SiC diodes are able to provide PIN 2 lower overall system costs in a variety of diverse applications. Package Type: TO-247-2 Marking: C4D40120 Features Applications Low Forward Voltage (V ) Drop with Positive Battery Chargers F Temperature Coefficient Solar & Renewable Energy Power Conversion Zero Reverse Recovery Current / Forward Recovery Industrial Power Supplies Voltage Boost Diodes in PFC & DC-DC Temperature-Independent Switching Behavior Increased Creepage / Clearance + HV-H3TRB Rugged Maximum Ratings (T = 25C unless otherwise specified) C Parameter Symbol Value Unit Test Conditions Note Repetitive Peak Reverse Voltage V 1200 RRM V DC Blocking Voltage V 1200 DC T = 25 C 128 J Continuous Forward Current I 88 T = 100 C Fig. 3 J F T = 155 C 41 J 161 A T = 25 C, t = 10 ms, Half Sine Pulse Repetitive Peak Forward Surge c p I FRM Current T = 110 C, t = 10 ms, Half Sine Pulse 91 c p 247 T = 25 C, t = 10 ms, Half Sine Pulse Non-Repetitive Forward Surge c p I FSM Current T = 110 C, t = 10 ms, Half Sine Pulse 245 c p 667 T = 25 C J Power Dissipation P W Fig. 4 tot T = 110 C 289 J 305 T = 25 C, t = 10 ms c p 2 2 2 i t Value i t A s T = 110 C, t = 10 ms 300 c p Rev. 0, OCTOBER 2021 4600 Silicon Drive Durham, NC 27703 wolfspeed.comC4D40120H 2 Electrical Characteristics Parameter Symbol Typ. Max. Units Test Conditions Note 1.5 1.8 I = 40 A, T = 25 C F J Forward Voltage V V Fig. 1 F 2.2 3 I = 40 A, T = 175 C F J 45 300 V = 1200 V, T = 25 C R J Reverse Current I A Fig. 2 R 75 500 V = 1200 V, T = 175 C R J Total Capacitive Charge Q 167 nC V = 800 V, T = 25 C Fig. 5 C R J 2,809 V = 0 V, T = 25 C, f = 1 MHz R J Total Capacitance C 174 pF V = 400 V, T = 25 C, f = 1 MHz Fig. 6 R J 145 V = 800 V, T = 25 C, f = 1 MHz R J Capacitance Stored Energy E 36 J V = 800 V Fig. 7 C R Note: SiC Schottky Diodes are majority carrier devices, so there is no reverse recovery charge. Thermal & Mechanical Characteristics Parameter Symbol Value Units Note Thermal Resistance, Junction to Case (Typ.) R 0.225 C / W , JC Operating Junction & Storage Temperature T , T -55 to +175 Fig. 8 J stg C Maximum Processing Temperature T 325 10 min. Maximum PROC Electrostatic Discharge (ESD) Classifications Parameter Symbol Value Human Body Model HBM Class 3B ( 8000 V) Charge Device Model CDM Class C3 ( 1000 V) Rev. 0, OCTOBER 2021 4600 Silicon Drive Durham, NC 27703 wolfspeed.com