C6D06065G th 6 Generation 650 V, 6 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. 1 2 SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination PIN 1 with the reduced cooling requirements and improved thermal CASE performance of SiC products, SiC diodes are able to provide PIN 2 lower overall system costs in a variety of diverse applications. Package Type: TO-263-2 Marking: C6D06065 Features Applications Low Forward Voltage (V ) Drop with Positive Industrial Power Supplies F Temperature Coefficient Switch Mode Power Supplies Zero Reverse Recovery Current / Forward Server / Telecom Power Supplies Recovery Voltage Power Factor Correction Temperature-Independent Switching Behavior Solar Inverter Low Leakage Current (I ) Uninterruptible Power Supply R Maximum Ratings (T = 25C unless otherwise specified) C Parameter Symbol Value Unit Test Conditions Note Repetitive Peak Reverse Voltage V 650 RRM V DC Blocking Voltage V 650 DC 23 T = 25 C J T = 125 C Continuous Forward Current I 12 Fig. 3 J F 6 T = 155 C J T = 25 C, t = 10 ms, Half Sine Wave 25 Repetitive Peak Forward Surge c p I FRM Current 14 A T = 110 C, t = 10 ms, Half Sine Wave c p T = 25 C, t = 10 ms, Half Sine Wave 45 c p I Fig. 8 FSM 33 T = 110 C, t = 10 ms, Half Sine Wave Non-Repetitive Peak Forward c p Surge Current T = 25 C, t = 10 s, Pulse 620 c p I F, Max 570 T = 110 C, t = 10 s, Pulse c p T = 25 C 73 J Power Dissipation P W Fig. 4 tot 31 T = 110 C J Rev. 0, JULY 2021 4600 Silicon Drive Durham, NC 27703 wolfspeed.comC6D06065G 2 Electrical Characteristics Parameter Symbol Typ. Max. Units Test Conditions Note 1.27 1.40 I = 6 A, T = 25 C F J Drain-Source Voltage V V Fig. 1 F 1.37 1.50 I = 6 A, T = 175 C F J 2 20 V = 650 V, T = 25 C R J Reverse Current I A Fig. 2 R 25 200 V = 650 V, T = 175 C R J Total Capacitive Charge Q 22 nC V = 400 V, T = 25 C Fig. 5 C R J 393 V = 0 V, T = 25 C, f = 1 MHz R J Total Capacitance C 44 pF V = 200 V, T = 25 C, f = 1 MHz Fig. 6 R J 36 V = 400 V, T = 25 C, f = 1 MHz R J Capacitance Stored Energy E 3.5 J V = 400 V Fig. 7 C R Note: SiC Schottky Diodes are majority carrier devices, so there is no reverse recovery charge. Thermal & Mechanical Characteristics Parameter Symbol Typ. Units Note Thermal Resistance, Junction to Case R 2.05 C / W , JC Operating Junction & Storage Temperature T , T -55 to +175 C Fig. 9 J stg Rev. 0, JULY 2021 4600 Silicon Drive Durham, NC 27703 wolfspeed.com