Dual Channel SiC MOSFET Driver Gate Driver for 1200V, 62mm SiC MOSFET Power Module Features 2 output channels Integrated isolated power supply Direct mount low inductance design Short circuit protection Under voltage protection For use with Cree Modules CAS300M12BM2, 1200V, 300A module. CAS120M12BM2, 1200V, 120A module. Applications Driver for SiC MOSFET modules in industrial applications. Part Number Package Marking DC Bus voltage up to 1000V CGD15HB62P1 PCBA CGD15HB62P1 Absolute Maximum Ratings Note Symbol Parameter Value Unit Test Conditions V Power Supply Voltage 16 V s V Input signal voltage HIGH 5 V iH V Input signal voltage LOW 0 V iL Gate drive capable of 9A, but 10 I Output peak current 9 (2) A of gate resistance lowers peak to O.pk 2A P Ouput power per gate 1.8 W O AVG F Max. Switching frequency 64 kHz Max Max. Drain to source V 1200 V DS voltage Input to output isolation V 1200 V isol voltage Rate of change of output to dv/dt 50,000 V/s input voltage 1 CGD15HB62P1 Rev - , 09-2015 W Weight 44 g 6 MTBF Mean time between failure 1.5x10 h T Operating temperature -35 to 85 C op T Storage temperature -40 to 85 C stg Characteristics Value Symbol Parameter Unit Test Conditions Notes Min Typ Max V Supply voltage 14 15.0 16 V S V Input signal voltage on/off 5/0 V i 25C 72 Supply current (no load) I mA SO f=64khz, 25C Supply current (max.) 300 360 Input threshold voltage V 3.5 V iT+ HIGH Input threshold voltage V 1.5 V iT- LOW R Input resistance 48 k in C Coupling capacitance 10 pf io Time from when input Fig.3, t Turn on propogation delay 300 nS pin goes high until driver don 4 output goes high Time from when input Fig.3, t Turn off propogation delay 300 nS pin goes low until driver doff 4 output goes low V time from 10% to OUT t Output voltage rise time 65 nS 90% with R = 0ohms, Fig. 5 G Rout C = 40,000pf LOAD V time from 90% to OUT t Output voltage fall time 50 nS 10% with R = 0ohms, Fig. 5 G Fout C = 40,000pf LOAD R Turn-on gate resistor 10 GON R Turn-off gate resistor 10 GOFF V Gate voltage at turn-on +20 V GATEON V Gate voltage at turn-off -5 V GATEOFF Total time from when Short Circuit Response short circuit current t 1.5 S SC begins flowing until it is Time interrupted V value that causes the DS V V monitoring threshold 4.7 V driver to trip on DS,TRIP DS overcurrent Time from when desat t Fault Delay Time 425 nS pin=9V until the gate FLT DLY output begins turning off 2 CGD15HB62P1 Rev - , 09-2015