E4D02120E th 4 Generation 1200 V, 2 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. 1 2 SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination PIN 1 with the reduced cooling requirements and improved thermal CASE performance of SiC products, SiC diodes are able to provide PIN 2 lower overall system costs in a variety of diverse applications. Package Type: TO-252-2 Marking: E4D02120 Features Applications Low Forward Voltage (V ) Drop with Positive Bootstrap Diode F Temperature Coefficient Boost Diodes in PFC Zero Reverse Recovery Current / Forward Automotive Power Conversion Recovery Voltage PV Inverters Temperature-Independent Switching Behavior Outdoor Power Conversion AEC-Q101 + HV-H3TRB Qualified, PPAP Capable Maximum Ratings (T = 25C unless otherwise specified) C Parameter Symbol Value Unit Test Conditions Note Repetitive Peak Reverse Voltage V 1200 RRM V DC Blocking Voltage V 1200 DC T = 25 C 8 J Continuous Forward Current I 4 T = 135 C Fig. 3 J F T = 160 C 2 A J 11 T = 25 C, t = 10 ms, Half Sine Wave Repetitive Peak Forward Surge c p I FRM Current T = 110 C, t = 10 ms, Half Sine Wave 7 c p 50 T = 25 C C Power Dissipation P W Fig. 4 tot T = 110 C 21 C Rev. 0, OCTOBER 2021 4600 Silicon Drive Durham, NC 27703 wolfspeed.comE4D02120E 2 Electrical Characteristics Parameter Symbol Typ. Max. Units Test Conditions Note 1.4 1.8 I = 2 A, T = 25 C F J Forward Voltage V V Fig. 1 F 1.9 I = 2 A, T = 175 C F J 10 50 V = 1200 V, T = 25 C R J Reverse Current I A Fig. 2 R 40 V = 1200 V, T = 175 C R J Total Capacitive Charge Q 16 nC V = 800 V, T = 25 C Fig. 5 C R J 153 V = 0 V, T = 25 C, f = 1 MHz R J Total Capacitance C 17 pF V = 400 V, T = 25 C, f = 1 MHz Fig. 6 R J 14 V = 800 V, T = 25 C, f = 1 MHz R J Capacitance Stored Energy E 5.6 J V = 800 V Fig. 7 C R Note: SiC Schottky Diodes are majority carrier devices, so there is no reverse recovery charge. Thermal & Mechanical Characteristics Parameter Symbol Value Units Note Thermal Resistance, Junction to Case (Typ.) R 2.99 C / W , JC Operating Junction & Storage Temperature T , T -55 to +175 Fig. 8 J stg C Maximum Processing Temperature T 325 10 min. Maximum PROC Moisture Sensitivity Level MSL MSL 3 Electrostatic Discharge (ESD) Classifications Parameter Symbol Value Human Body Model HBM Class 3B ( 8000 V) Charge Device Model CDM Class C3 ( 1000 V) Rev. 0, OCTOBER 2021 4600 Silicon Drive Durham, NC 27703 wolfspeed.com