GBJ3501 is a semi-insulating, N type Gallium Nitride (GaN) power transistor, designed to operate in high voltage, high current switching applications. It is suitable for use in DC-DC converters, high efficiency power conversion, and other high power electronic applications. It features a drain-source breakdown voltage of 350V, a high current carrying capacity of 180A, and a very low gate charge. It also features an exceptionally low drain-source on-state resistance and a high switching frequency. It is lead-free, RoHS compliant, and is fabricated using advanced GaN technology.