X-On Electronics has gained recognition as a prominent supplier of A3T1GF40CBF-GMLI DRAM across the USA, India, Europe, Australia, and various other global locations. A3T1GF40CBF-GMLI DRAM are a product manufactured by Zentel. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

A3T1GF40CBF-GMLI Zentel

A3T1GF40CBF-GMLI electronic component of Zentel
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Part No.A3T1GF40CBF-GMLI
Manufacturer: Zentel
Category: DRAM
Description: DRAM DDR3L 1Gb, 64Mx16, 1600 @CL11, 1.35V, FBGA-96, Ind. Temp.
Datasheet: A3T1GF40CBF-GMLI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1900: USD 3.2832 ea
Line Total: USD 6238.08

Availability - 0
MOQ: 1900  Multiples: 1900
Pack Size: 1900
Availability Price Quantity
0
Ship by Fri. 16 Aug to Tue. 20 Aug
MOQ : 1900
Multiples : 1900
1900 : USD 3.0015
5700 : USD 2.921
11400 : USD 2.8635

   
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We are delighted to provide the A3T1GF40CBF-GMLI from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A3T1GF40CBF-GMLI and other electronic components in the DRAM category and beyond.

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Doc. No. DSA3T1GF340CBFLF.04 A3T1GF30CBF/A3T1GF40CBF 1Gb DDR3L SDRAM 1Gb DDR3L (1.35V) SDRAM Specification Specifications Features Density: 1G bits The high-speed data transfer is realized by the 8 bits Organization prefetch pipelined architecture o 8 banks x 16M words x 8 bits o 8 banks x 8M words x 16 bits Double data-rate architecture: two data transfers per clock cycle Package o 78-ball FBGA Bi-directional differential data strobe (DQS and /DQS) o 96-ball FBGA is transmitted/received with data for capturing data o Lead-free(RoHS compliant) and Halogen-free at the receiver Power supply: DQS is edge-aligned with data for READs center o VDD, VDDQ =1.35V (1.283 to 1.45V) aligned with data for WRITEs o Backward compatible DDR3 (1.5V) operation Differential clock inputs (CK and /CK) Data Rate: 1333Mbps/1600Mbps/1866Mbps (max.) DLL aligns DQ and DQS transitions with CK transitions 1KB page size (x8) Commands entered on each positive CK edge data o Row address: AX0 to AX13 and data mask referenced to both edges of DQS o Column address: AY0 to AY9 Data mask (DM) for write data 2KB page size (x16) Posted CAS by programmable additive latency for o Row address: AX0 to AX13 better command and data bus efficiency o Column address: AY0 to AY9 On-Die Termination (ODT) for better signal quality Eight internal banks for concurrent operation o Synchronous ODT Burst lengths(BL): 8 and 4 with Burst Chop(BC) o Dynamic ODT Burst type(BT) o Asynchronous ODT o Sequential (8, 4 with BC) Multi Purpose Register (MPR) for pre-defined pattern o Interleave (8, 4 with BC) read out CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13 ZQ calibration for DQ drive and ODT CAS Write Latency (CWL): 5, 6, 7, 8, 9 Programmable Partial Array Self-Refresh (PASR) Precharge: auto precharge option for each burst RESET pin for Power-up sequence and reset function access SRT(Self Refresh Temperature) range: Driver strength: RZQ/7, RZQ/6 (RZQ = 240) o Normal/Extended Refresh: auto-refresh, self-refresh Auto Self-Refresh (ASR) Average refresh period Programmable output driver impedance control o 7.8us at TC +85 JEDEC compliant DDR3 o 3.9us at TC > +85 Operating temperature range o TC = 0C to +95C (Commercial grade) o TC = -40C to +95C (Industrial grade) o TC = -40C to +105C (Automotive grade) Key Timing Parameters Speed Grade Data Rate(Mbps) CL nRCD nRP 1, 2 -HPL 1866 13 13 13 1 -GML 1600 11 11 11 -DKL 1333 9 9 9 Notes: 1. Backward compatible to 1333, CL-nRCD-nRP = 9-9-9 2. Backward compatible to 1600, CL-nRCD-nRP = 11-11-11 Rev. 04 Oct. 14, 2020 1 of 38 Zentel Japan Corporation reserves the right to change products and/or specifications without notice. 2020 Zentel Japan Corporation. All rights reserved. Doc. No. DSA3T1GF340CBFLF.04 A3T1GF30CBF/A3T1GF40CBF 1Gb DDR3L SDRAM Table of Contents 1Gb DDR3L (1.35V) SDRAM Specification .......................................................................................................................... 1 1. Ordering Information ............................................................................................................................................ 3 2. Package Ball Assignment ....................................................................................................................................... 4 3. Package outline drawing ....................................................................................................................................... 5 4. Electrical Specifications ......................................................................................................................................... 7 5. Block Diagram ......................................................................................................................................................19 6. Pin Function .........................................................................................................................................................20 7. Command Operation ............................................................................................................................................22 8. Functional Description..........................................................................................................................................26 Rev. 04 Oct. 14, 2020 2 of 38 Zentel Japan Corporation reserves the right to change products and/or specifications without notice. 2020 Zentel Japan Corporation. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

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