X-On Electronics has gained recognition as a prominent supplier of A3T4GF30BBF-JRI DRAM across the USA, India, Europe, Australia, and various other global locations. A3T4GF30BBF-JRI DRAM are a product manufactured by Zentel. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

A3T4GF30BBF-JRI Zentel

A3T4GF30BBF-JRI electronic component of Zentel
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Part No.A3T4GF30BBF-JRI
Manufacturer: Zentel
Category: DRAM
Description: DRAM DDR3 4Gb, 512Mx8, 2133 @CL14, 1.5V, FBGA-78, Ind. Temp.
Datasheet: A3T4GF30BBF-JRI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2420: USD 3.542 ea
Line Total: USD 8571.64 
Availability - 0
MOQ: 2420  Multiples: 2420
Pack Size: 2420
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 2420
Multiples : 2420
2420 : USD 3.542
4840 : USD 3.432
9680 : USD 3.377

   
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We are delighted to provide the A3T4GF30BBF-JRI from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A3T4GF30BBF-JRI and other electronic components in the DRAM category and beyond.

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Doc. No. DSA3T4GF340BBFF.05 A3T4GF30BBF/A3T4GF40BBF 4Gb DDR3/DDR3L SDRAM 4Gb DDR3/DDR3L SDRAM Specification Specifications Features Density: 4G bits The high-speed data transfer is realized by the 8 Organization bits prefetch pipelined architecture o 8 banks x 64M words x 8 bits Double data-rate architecture: two data transfers o 8 banks x 32M words x 16 bits per clock cycle Package Bi-directional differential data strobe (DQS and o 78-ball FBGA /DQS) is transmitted/received with data for o 96-ball FBGA capturing data at the receiver Power supply: DQS is edge-aligned with data for READs center -HP aligned with data for WRITEs o VDD, VDDQ = 1.35 V (1.283 to 1.45 V) Differential clock inputs (CK and /CK) o Backward compatible with DDR3 operation DLL aligns DQ and DQS transitions with CK VDD, VDDQ = 1.5 V (1.425 to 1.575 V) transitions -JR Commands entered on each positive CK edge data o VDD, VDDQ = 1.5 V (1.425 to 1.575 V) and data mask referenced to both edges of DQS -JRL Data mask (DM) for write data o VDD, VDDQ = 1.35 V (1.283 to 1.45 V) Posted CAS by programmable additive latency for Data Rate: 1866 Mbps/2133 Mbps (max.) better command and data bus efficiency 1KB page size (x8) On-Die Termination (ODT) for better signal quality o Row address: AX0 to AX15 o Synchronous ODT o Column address: AY0 to AY9 o Dynamic ODT 2KB page size (x16) o Asynchronous ODT o Row address: AX0 to AX14 Multi Purpose Register (MPR) for pre-defined o Column address: AY0 to AY9 pattern read out Eight internal banks for concurrent operation ZQ calibration for DQ drive and ODT Burst lengths(BL): 8 and 4 with Burst Chop(BC) Programmable Partial Array Self-Refresh (PASR) Burst type(BT) RESET pin for Power-up sequence and reset o Sequential (8, 4 with BC) function o Interleave (8, 4 with BC) SRT(Self Refresh Temperature) range: CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13, 14 o Normal/Extended CAS Write Latency (CWL): 5, 6, 7, 8, 9, 10 Auto Self-Refresh (ASR) Precharge: auto precharge option for each burst Programmable output driver impedance control access JEDEC compliant DDR3/DDR3L Driver strength: RZQ/7, RZQ/6 (RZQ = 240 ) Row-Hammer-Free (RH-Free): detection/blocking Refresh: auto-refresh, self-refresh circuit inside Average refresh period o 7.8 us at TC +85 o 3.9 us at TC > +85 Operating temperature range o TC = 0C to +95C (Commercial grade) o TC = -40C to +95C (Industrial grade) o TC = -40C to +105C (Automotive grade) Key Timing Parameters Speed Grade Data Rate(Mbps) CL nRCD nRP 1, 2, 3 -JR 2133 14 14 14 1, 2 -HP 1866 13 13 13 Notes: 1. Backward compatible to 1333, CL-nRCD-nRP = 9-9-9 2. Backward compatible to 1600, CL-nRCD-nRP = 11-11-11 3. Backward compatible to 1866, CL-nRCD-nRP = 13-13-13 Rev. 05 Oct. 14, 2020 1 of 49 Zentel Japan Corporation reserves the right to change products and/or specifications without notice. 2020 Zentel Japan Corporation. All rights reserved. Doc. No. DSA3T4GF340BBFF.05 A3T4GF30BBF/A3T4GF40BBF 4Gb DDR3/DDR3L SDRAM Table of Contents 4Gb DDR3 SDRAM Specification ................................................................................................................. 1 1. Ordering Information ....................................................................................................................... 3 2. Package Ball Assignment .................................................................................................................. 4 3. Package outline drawing .................................................................................................................. 5 4. Electrical Specifications .................................................................................................................... 7 5. Block Diagram................................................................................................................................ 30 6. Pin Function................................................................................................................................... 31 7. Command Operation ..................................................................................................................... 33 8. Functional Description ................................................................................................................... 37 Rev. 05 Oct. 14, 2020 2 of 49 Zentel Japan Corporation reserves the right to change products and/or specifications without notice. 2020 Zentel Japan Corporation. All rights reserved.

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8542.32.00 -- Memories
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