X-On Electronics has gained recognition as a prominent supplier of A3T8GF43BBF-GML DRAM across the USA, India, Europe, Australia, and various other global locations. A3T8GF43BBF-GML DRAM are a product manufactured by Zentel. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

A3T8GF43BBF-GML Zentel

A3T8GF43BBF-GML electronic component of Zentel
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Part No.A3T8GF43BBF-GML
Manufacturer: Zentel
Category: DRAM
Description: DRAM DDR3L 8Gb, 512Mx16 (1CS, 1ZQ), 1600 @CL11, 1.35V, FBGA-96
Datasheet: A3T8GF43BBF-GML Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1900: USD 13.838 ea
Line Total: USD 26292.2 
Availability - 0
MOQ: 1900  Multiples: 1900
Pack Size: 1900
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1900
Multiples : 1900
1900 : USD 13.838

   
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We are delighted to provide the A3T8GF43BBF-GML from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A3T8GF43BBF-GML and other electronic components in the DRAM category and beyond.

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Doc. No. DSA3T8GF343BBFLF.04 A3T8GF33BBF/A3T8GF43BBF 8Gb 1Rank DDR3L SDRAM 8Gb 1Rank DDR3L Specification Specifications Features Density: 8G bits The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture Organization o 1Rank x 8 banks x 128M words x 8 bits Double data-rate architecture: two data transfers o 1Rank x 8 banks x 64M words x 16 bits per clock cycle Package Bi-directional differential data strobe (DQS and o 78-ball FBGA /DQS) is transmitted/received with data for o 96-ball FBGA capturing data at the receiver o Lead-free(RoHS compliant) and Halogen-free DQS is edge-aligned with data for READs center Power supply: aligned with data for WRITEs o VDD, VDDQ =1.35V (1.283 to 1.45V) Differential clock inputs (CK and /CK) Data Rate: 1600Mbps/1866Mbps (max.) DLL aligns DQ and DQS transitions with CK 2KB page size transitions o Row address: AX0 to AX15 (x8)(x16) Commands entered on each positive CK edge data o Column address: AY0 to AY9 A11 (x8) and data mask referenced to both edges of DQS o Column address: AY0 to AY9 (x16) Data mask (DM) for write data Eight internal banks for concurrent operation Posted CAS by programmable additive latency for Burst lengths(BL): 8 and 4 with Burst Chop(BC) better command and data bus efficiency Burst type(BT) On-Die Termination (ODT) for better signal quality o Sequential (8, 4 with BC) o Synchronous ODT o Interleave (8, 4 with BC) o Dynamic ODT CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13 o Asynchronous ODT CAS Write Latency (CWL): 5, 6, 7, 8, 9 Multi Purpose Register (MPR) for pre-defined Precharge: auto precharge option for each burst pattern read out access ZQ calibration for DQ drive and ODT Driver strength: RZQ/7, RZQ/6 (RZQ =240) Programmable Partial Array Self-Refresh (PASR) Refresh: auto-refresh, self-refresh RESET pin for Power-up sequence and reset function Average refresh period o 7.8us at TC +85 SRT(Self Refresh Temperature) range: o 3.9us at TC > +85 o Normal/Extended Operating temperature range Auto Self-Refresh (ASR) o TC = 0C to +95C (Commercial grade) Programmable output driver impedance control o TC = -40C to +95C (Industrial grade) JEDEC compliant DDR3 Row-Hammer-Free (RH-Free): detection/blocking circuit inside Key Timing Parameters nRCD Speed Grade Data Rate(Mbps) CL nRP -HPL 1866 13 13 13 -GML 1600 11 11 11 Rev. 04 Oct. 14, 2020 1 of 35 Zentel Japan Corporation reserves the right to change products and/or specifications without notice. 2020 Zentel Japan Corporation. All rights reserved. Doc. No. DSA3T8GF343BBFLF.04 A3T8GF33BBF/A3T8GF43BBF 8Gb 1Rank DDR3L SDRAM Table of Contents 8Gb 1Rank DDR3L Specification ........................................................................................................................................ 1 1. Ordering Information ............................................................................................................................................ 3 2. Package Ball Assignment ....................................................................................................................................... 4 3. Package outline drawing ....................................................................................................................................... 5 4. Electrical Specifications ......................................................................................................................................... 7 5. Pin Function .........................................................................................................................................................17 6. Command Operation ............................................................................................................................................19 7. Functional Description..........................................................................................................................................23 Rev. 04 Oct. 14, 2020 2 of 35 Zentel Japan Corporation reserves the right to change products and/or specifications without notice. 2020 Zentel Japan Corporation. All rights reserved.

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8542.32.00 -- Memories
               Monolithic integrated circuits:
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