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X-On Electronics has gained recognition as a prominent supplier of EE-SX484 Optical Switches, Transmissive, Photo IC Output across the USA, India, Europe, Australia, and various other global locations. EE-SX484 Optical Switches, Transmissive, Photo IC Output are a product manufactured by Omron. We provide cost-effective solutions for Optical Switches, Transmissive, Photo IC Output, ensuring timely deliveries around the world.

EE-SX484 Omron

Hot EE-SX484 electronic component of Omron
EE-SX484 Omron
EE-SX484 Optical Switches, Transmissive, Photo IC Output
EE-SX484  Sensors

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See Product Specifications
Part No. EE-SX484
Manufacturer: Omron
Category: Optical Switches, Transmissive, Photo IC Output
Description: Optical Switches, Transmissive, Photo IC Output OPAQUE Light-ON
Datasheet: EE-SX484 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
29: USD 2.2282 ea
Line Total: USD 64.62 
Availability - 1483
Ship by Fri. 28 Feb to Thu. 06 Mar
MOQ: 29  Multiples: 1
Pack Size: 1
Availability Price Quantity
391
Ship by Fri. 28 Feb to Thu. 06 Mar
MOQ : 10
Multiples : 5
10 : USD 6.706
50 : USD 4.5875
200 : USD 4.4625
400 : USD 4.4375
600 : USD 4.425
1000 : USD 4.4
2600 : USD 4.375
5000 : USD 4.35

1483
Ship by Fri. 28 Feb to Thu. 06 Mar
MOQ : 29
Multiples : 1
29 : USD 2.2282
29 : USD 2.2269
29 : USD 2.2204

205
Ship by Wed. 26 Feb to Fri. 28 Feb
MOQ : 1
Multiples : 1
1 : USD 5.2
10 : USD 4.543
25 : USD 4.422
50 : USD 4.191
100 : USD 4.18
200 : USD 4.026

166
Ship by Wed. 26 Feb to Fri. 28 Feb
MOQ : 1
Multiples : 1
1 : USD 6.958
6 : USD 3.304
15 : USD 3.122

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Slot Width
Aperture Width
Forward Current
Maximum Operating Temperature
Minimum Operating Temperature
Series
If - Forward Current
Sensing Method
Brand
Forward Voltage
Reverse Voltage
Fall Time
High Level Output Voltage
Low Level Output Current
Low Level Output Voltage
Rise Time
Factory Pack Quantity :
Height
Length
Output Type
Termination Style
Wavelength
Mounting Style
Number Of Channels
Cnhts
Hts Code
Ir - Reverse Current
Mxhts
Operating Supply Voltage
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EE-SX484 from our Optical Switches, Transmissive, Photo IC Output category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EE-SX484 and other electronic components in the Optical Switches, Transmissive, Photo IC Output category and beyond.

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Photomicrosensor (Transmissive) EE-SX384/-SX484 Be sure to read Precautions on page 25. Dimensions Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- pensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects with C-MOS and TTL. 0.5 0.5 High resolution with a 0.5-mm-wide sensing aperture. Dark ON model (EE-SX384) Light ON model (EE-SX484) 5.5 5.5 8 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value 7 min. Five, 0.5 Emitter Forward current I 50 mA F Five, 0.25 (see note 1) 2.5 1.25 1.25 Reverse voltage V 4 V R Cross section AA Cross section BB Detector Power supply volt- V 16 V CC age Output voltage V 28 V OUT Output current I 16 mA OUT Internal Circuit Permissible output P 250 mW (see OUT K V dissipation note 1) 0 Ambient tem- Operating Topr 40C to 75C perature Storage Tstg 40C to 85C A G Soldering temperature Tsol 260C (see note 2) Terminal No. Name A Anode Note: 1. Refer to the temperature rating chart if the ambient temper- K Cathode ature exceeds 25C. 2. Complete soldering within 10 seconds. V Power supply Unless otherwise specified, (Vcc) the tolerances are 0.2 mm. O Output (OUT) G Ground (GND) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wave- 940 nm typ. I = 20 mA P F length Detector Low-level output volt- V 0.12 V typ., 0.4 V max. V = 4.5 to 16 V, I = 16 mA, I = 0 mA (EE-SX384), OL CC OL F age I = 8 mA (EE-SX484) F High-level output volt- V 15 V min. V = 16 V, R = 1 k, I = 8 mA (EE-SX384), I = 0 mA OH CC L F F age (EE-SX484) Current consumption I 3.2 mA typ., 10 mA max. V = 16 V CC CC Peak spectral sensitivi- 870 nm typ. V = 4.5 to 16 V P CC ty wavelength LED current when output is OFF I 3 mA typ., 8 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis H 15% typ. V = 4.5 to 16 V (see note 1) CC Response frequency f 3 kHz min. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 2) CC F OL Response delay time t (t )3 s typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PLH PHL CC F OL Response delay time t (t ) 20 s typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PHL PLH CC F OL 128 EE-SX384/-SX484 Photomicrosensor (Transmissive)3. The following illustrations show the definition of response Note: 1. Hysteresis denotes the difference in forward LED delay time. The value in the parentheses applies to the EE- current value, expressed in percentage, calculated SX484. from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input Input 2. The value of the response frequency is measured Output by rotating the disk as shown below. Output 2.1 mm EE-SX384 EE-SX484 Disk 0.5 mm 0.5 mm Engineering Data Note: The values in the parentheses apply to the EE-SX484. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25C R = 1 k L Ta = 30C Ta = 25C I OFF (I ON) FT FT Ta = 70C I ON (I OFF) FT FT Ambient temperature Ta (C) Forward voltage V (V) Supply voltage V (V) F CC Low-level Output Voltage vs. Low-level Output Voltage vs. Am- LED Current vs. Ambient Temper- Output Current (Typical) bient Temperature Characteristics ature Characteristics (Typical) (Typical) V = 5 V Ta = 25C CC V = 5 V CC R = 330 L V = 5 V CC I = 0 mA (15 mA) F I = 0 mA (15 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Ambient temperature Ta (C) Ambient temperature Ta (C) Output current I (mA) C Current Consumption vs. Supply Response Delay Time vs. Forward Repeat Sensing Position Voltage (Typical) Current (Typical) Characteristics (Typical) VCC = 5 V Ta = 25C Ta = 25C R = 330 I = 15 mA I = 0 mA (15 mA) L F F Ta = 25C V = 5 V CC R = 330 L V OUT n = repeat 20 times (EE-SX3 ) V OUT d = 0.01 mm 1 (EE-SX4 ) Center of optical axis Supply voltage V (V) Forward current I (mA) Distance d (mm) CC F EE-SX384/-SX484 Photomicrosensor (Transmissive) 129 Current consumption Icc (mA) Forward current I (mA) LED current I (mA) F FT Output allowable dissipation P (mW) C Low level output voltage V (V) OL Response delay time t , t (s) PHL PLH Forward current I (mA) F Output transistor Low level output voltage V (V) OL LED current I (mA) FT

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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