About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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BSM75GAR120DN2


IGBT Transistors 1200V 100A GAR CH
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USD 99.2049

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Single1200 V2.5 V+/- 20 V100 A400 nA625 W IS4 (34 mm) - 5TraySiScrew625 W- 40 C+ 150 C 
IRG4MC50F


Trans IGBT Chip N-CH 600V 35A 3-Pin(3+Tab) TO-254AA
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USD 115.2368

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FZ1200R12HE4PHPSA1


IGBT Transistors PP IHM I XHP 1 7KV
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USD 854.4312

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FZ1200R17HE4PHPSA1


IGBT Transistors PP IHM I XHP 1 7KV
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USD 958.4226

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