PD -94274A
IRG4MC50F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features C
Electrically Isolated and Hermetically Sealed
V = 600V
Simple Drive Requirements CES
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
V = 2.0V
CE(on) max
G
High operating frequency
Switching-loss rating includes alltai losses
@V = 15V, I = 30A
E GE C
Ceramic eyelets
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be adrop-i replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
TO-254AA
current applications.
Absolute Maximum Ratings
Parameter Max. Units
V Collector-to-Emitter Breakdown Voltage 600 V
CES
I @ T = 25C Continuous Collector Current 35*
C C
I @ T = 100C Continuous Collector Current 30 A
C C
I Pulsed Collector Current 140
CM
I Clamped Inductive Load Current 140
LM
V Gate-to-Emitter Voltage 20 V
GE
P @ T = 25C Maximum Power Dissipation 150 W
D C
P @ T = 100C Maximum Power Dissipation 60
D C
T Operating Junction and -55 to + 150
J
T Storage Temperature Range C
STG
Lead Temperature 300 (0.063in./1.6mm from case for 10s)
Weight 9.3 (typical) g
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
C/W
R Junction-to-Case 0.83
thJC
* Current is limited by internal wire diameter
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02/08/02IRG4MC50F
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 1.0 mA
(BR)CES GE C
V Emitter-to-Collector Breakdown Voltage 17 VV = 0V, I = 1.0 A
(BR)ECS GE C
V / T Temperature Coeff. of Breakdown Voltage 0.58 V/CV = 0V, I = 1.0 mA
(BR)CES J GE C
2.0 I = 30A V = 15V
C GE
V Collector-to-Emitter Saturation Voltage 2.2 V I = 35A See Fig.2, 5
C
CE(ON)
1.9 I = 30A , T = 125C
C J
V Gate Threshold Voltage 3.0 6.0 V = V , I = 1.0 mA
GE(th) CE GE C
V / T Temperature Coeff. of Threshold Voltage -11.8 mV/CV = V , I = 250 A
GE(th) J CE GE C
g Forward Transconductance 21 SV 15V, I = 30A
fe CE C
250 V = 0V, V = 480V
GE CE
I Zero Gate Voltage Collector Current
A
CES
2000 V = 0V, V = 480V, T = 125C
GE CE J
I Gate-to-Emitter Leakage Current 100 nA V = 20V
GES GE
Switching Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
Q Total Gate Charge (turn-on) 290 I = 30A
g C
Q Gate - Emitter Charge (turn-on) 42 nC V = 480V See Fig. 8
ge CC
Q Gate - Collector Charge (turn-on) 97 V = 15V
gc GE
t Turn-On Delay Time 50 T = 25C
d(on) J
t Rise Time 25 I = 30A, V = 480V
r C CC
ns
t Turn-Off Delay Time 350 V = 15V, R = 2.35
d(off) GE G
t Fall Time 300 Energy losses includetai
f
E Total Switching Loss 3.0 mJ See Fig. 10, 11, 13, 14
ts
t Turn-On Delay Time 50 T = 125C,
d(on) J
t Rise Time 25 ns I = 30A, V = 480V
r C CC
t Turn-Off Delay Time 475 V = 15V, R = 2.35
d(off) GE G
t Rise Time 400 Energy losses includetai
r
E Total Switching Loss 6.0 mJ See Fig. 13, 14
ts
L +L Total Inductance 6.8 nH Measured from Collector lead (6mm/
C E
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
C Input Capacitance 4100 V = 0V
ies GE
C Output Capacitance 250 pF V = 30V See Fig. 7
oes CC
C Reverse Transfer Capacitance 49 = 1.0MHz
res
Notes:
Repetitive rating; V = 20V, pulse width limited by
GE
Pulse width 80s; duty factor 0.1%.
max. junction temperature. ( See fig. 13b )
Pulse width 5.0s, single shot.
V = 80%(V ), V = 20V, L = 100H, R = 2.35 ,
CC CES GE G
(See fig. 13a)
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