About IGBT Transistors

Microchip IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT33GF120LRDQ2G


IGBT Transistors IGBT NPT Low Frequency Combi 1200 V 33 A TO-264
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USD 15.036

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      357 W   NPT     
APT40GP90BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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USD 15.6446

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      543 W   POWER MOS 7®, PT     
APT40GP90B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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USD 16.0167

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      543 W   POWER MOS 7®, PT     
APT100GN60LDQ4G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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USD 16.925

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Single600 V1.5 V30 V229 A600 nA  TO - 264 - 3TubeSiThrough Hole625 W- 55 C+ 175 C 
APT102GA60B2


IGBT Transistors FG, IGBT, 600V, TO-247 T-MAX
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USD 17.234

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      780 W   POWER MOS 8®, PT     
APT75GN120B2G


IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHS
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USD 19.362

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      833 W   Field Stop     
APT50GT120B2RDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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USD 20.175

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      625 W   NPT     
APT35GP120B2D2G


IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX
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USD 22.82

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      543 W   POWER MOS 7®, PT     
APT200GN60B2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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USD 24.0465

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      682 W   Field Stop     
APT50GF120B2RG


IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency - Single
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USD 25.172

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      781 W   NPT     
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