X-On Electronics has gained recognition as a prominent supplier of APT35GP120B2D2G IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. APT35GP120B2D2G IGBT Transistors are a product manufactured by Microchip. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

APT35GP120B2D2G Microchip

APT35GP120B2D2G electronic component of Microchip
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Part No.APT35GP120B2D2G
Manufacturer: Microchip
Category: IGBT Transistors
Description: IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX
Datasheet: APT35GP120B2D2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 23.3933 ea
Line Total: USD 23.39 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 23.3933
2 : USD 22.1179

   
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We are delighted to provide the APT35GP120B2D2G from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT35GP120B2D2G and other electronic components in the IGBT Transistors category and beyond.

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TechnologyThe APT35GP120B2D2G is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It is made up of seven IGBT PT MOS Combi devices with a maximum voltage rating of 1200 V and a current rating of 35 A. This IGBT features a TO-247 MAX package for ease of installation and has an avalanche rated environment for safe operation. The IGBT has a fast switching time for improved efficiency and performance and has a reverse dv/dt feature for enhanced reliability. It is also designed to withstand high temperature and overload conditions for reliable operation in harsh environments.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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