IXSH 20N60B2D1
V = 600 V
High Speed IGBT
CES
I = 35 A
C25
V = 2.5 V
Short Circuit SOA Capability
CE(sat)
Preliminary Data Sheet
D1
Symbol Test Conditions Maximum Ratings TO-247 (IXSH)
V T = 25C to 150C 600 V
CES J
V T = 25C to 150C; R = 1 M 600 V
CGR J GE
V Continuous 20 V
GES
G
V Transient 30 V C
GEM
E
I T = 25C35A
C25 C
G = Gate C = Collector
I T = 110C20A
C110 C
E = Emitter TAB = Collector
I 21 A
F(110)
I T = 25C, 1 ms 60 A
CM C
SSOA V = 15 V, T = 125C, R = 82 I = 32 A
GE J G CM
(RBSOA) Clamped inductive load @ 0.8 V
Features
CES
t V = 15 V, V = 360 V, T = 125C 10 s
SC GE CE J
International standard package
(SCSOA) R = 82 , non repetitive
G
Guaranteed Short Circuit SOA
P T = 25C 190 W
capability
C C
Low V
CE(sat)
T -55 ... +150 C
J
- for low on-state conduction losses
T 150 C
High current handling capability
JM
MOS Gate turn-on
T -55 ... +150 C
stg
- drive simplicity
Weight 2 g
Fast fall time for switching speeds
up to 20 kHz
Maximum lead temperature for soldering 300 C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s 260 C
Applications
AC motor speed control
Symbol Test Conditions Characteristic Values
Uninterruptible power supplies (UPS)
(T = 25C, unless otherwise specified)
J
Welding
min. typ. max.
BV I = 250 A, V = 0 V 600 V
CES C GE
Advantages
V I = 750 A, V = V 3.5 6.5 V
GE(th) C CE GE
High power density
I V = V 85 A
CES CE CES
V = 0 V T = 125C 0.6 mA
GE J
I V = 0 V, V = 20 V 100 nA
GES CE GE
V I = 16A, V = 15 V 2.5 V
CE(sat) C GE
DS99174(10/04)
2004 IXYS All rights reservedIXSH 20N60B2D1
Symbol Test Conditions Characteristic Values
TO-247 Outline
(T = 25C, unless otherwise specified)
J
min. typ. max.
g I = 16A; V = 10 V, Note 1 3.5 7.0 S
fs C CE
C 800 pF
ies
1 2 3
C V = 25 V, V = 0 V 110 pF
oes CE GE
C f = 1 MHz 28 pF
res
Q 33 nC
g
Q I = 16A, V = 15 V, V = 0.5 V 12 nC
ge C GE CE CES
Q 12 nC
Terminals: 1 - Gate 2 - Drain
gc
3 - Source Tab - Drain
Inductive load, T = 25C
J
t 30 ns
d(on)
Dim. Millimeter Inches
I = 16A, V = 15 V
C GE
t 30 ns
Min. Max. Min. Max.
ri
V = 0.8 V , R = 10
CE CES G
A 4.7 5.3 .185 .209
t 116 ns
Switching times may increase for V
d(off)
A 2.2 2.54 .087 .102
CE
1
(Clamp) > 0.8 V , higher T or A 2.2 2.6 .059 .098
t 126 ns 2
CES J
fi
b 1.0 1.4 .040 .055
increased R
G
E 380 600 J
b 1.65 2.13 .065 .084
off
1
b 2.87 3.12 .113 .123
2
t 30 ns
C .4 .8 .016 .031
d(on)
Inductive load, T = 125C
J
D 20.80 21.46 .819 .845
t 30 ns
ri E 15.75 16.26 .610 .640
I = 16 A, V = 15 V
C GE
e 5.20 5.72 0.205 0.225
E 0.52 mJ
V = 0.8 V , R = 10
on
CE CES G
L 19.81 20.32 .780 .800
Switching times may increase for
t 180 ns L1 4.50 .177
d(off)
V (Clamp) > 0.8 V , higher T
P 3.55 3.65 .140 .144
CE CES J
t 210 ns
fi
or increased R Q 5.89 6.40 0.232 0.252
G
E 970 J
R 4.32 5.49 .170 .216
off
S 6.15 BSC 242 BSC
R 0.66 K/W
thJC
R 0.25 K/W
thCS
Reverse Diode (FRED) Characteristic Values
(T = 25C, unless otherwise specified)
J
Symbol Test Conditions min. typ. max.
V I = 15A, V = 0 V T =150C 1.35 V
F F GE J
2.10 V
I I = 25A, V = 0 V, -di /dt = 100 A/s T = 100C 4.5 A
RM F GE F J
t V = 100 V T = 100C 110 ns
rr R J
t I = 1 A; -di/dt = 100 A/s; V = 30 V 30 ns
rr F R
R 1.6 K/W
thJC
Note 1: Pulse test, t 300 s, duty cycle d 2 %
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463