IXSA 20N60B2D1
V = 600 V
High Speed IGBT
CES
IXSP 20N60B2D1
I = 35 A
C25
V = 2.5 V
Short Circuit SOA Capability
CE(sat)
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings TO-220 (IXSP)
V T = 25C to 150C 600 V
CES J
V T = 25C to 150C; R = 1 M 600 V
CGR J GE
C (TAB)
V Continuous 20 V
GES
G
C
V Transient 30 V
E
GEM
I T = 25C35A
C25 C
I T = 110C20A
C110 C
TO-220 (IXSA)
I 11 A
F(110)
I T = 25C, 1 ms 60 A
CM C
SSOA V = 15 V, T = 125C, R = 82 I = 32 A
GE J G CM
(RBSOA) Clamped inductive load @ 0.8 V
CES
G
C (TAB)
C
t V = 15 V, V = 360 V, T = 125C 10 s
SC GE CE J
(SCSOA) R = 82 , non repetitive
G
P T = 25C 190 W
C C
G = Gate C = Collector
T -55 ... +150 C
J E = Emitter TAB = Collector
T 150 C
JM
T -55 ... +150 C
Features
stg
Weight 2 g
International standard packages
Guaranteed Short Circuit SOA
Maximum lead temperature for soldering 300 C
capability
1.6 mm (0.062 in.) from case for 10 s
Low V
Maximum tab temperature for soldering for 10s 260 C
CE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
Symbol Test Conditions Characteristic Values
(T = 25C, unless otherwise specified) - drive simplicity
J
min. typ. max. Fast fall time for switching speeds
up to 20 kHz
BV I = 250 A, V = 0 V 600 V
CES C GE
V I = 750 A, V = V 3.5 6.5 V
GE(th) C CE GE
Applications
I V = V 85 A
CES CE CES
AC motor speed control
V = 0 V T = 125 C 0.6 mA
GE J
Uninterruptible power supplies (UPS)
Welding
I V = 0 V, V = 20 V 100 nA
GES CE GE
V I = 16A, V = 15 V 2.5 V
CE(sat) C GE
Advantages
High power density
DS99181B(12/05)
2004 IXYS All rights reservedIXSA 20N60B2D1
IXSP 20N60B2D1
Symbol Test Conditions Characteristic Values
TO-220 AB (IXSP) Outline
(T = 25C, unless otherwise specified)
J
min. typ. max.
g I = 16A; V = 10 V, Note 1 3.5 7.0 S
fs C CE
C 800 pF
ies
C V = 25 V, V = 0 V 76 pF
oes CE GE
f = 1 MHz 20N60B2D1 90 pF
C 28 pF
res
Q 33 nC
g
Q I = 16A, V = 15 V, V = 0.5 V 12 nC
ge C GE CE CES
Q 12 nC
gc
Inductive load, T = 25C
t 30 ns
J Dim. Millimeter Inches
d(on)
Min. Max. Min. Max.
I = 16A, V = 15 V
t 30 ns
C GE
ri
A 12.70 13.97 0.500 0.550
V = 0.8 V , R = 10
CE CES G
B 14.73 16.00 0.580 0.630
t 116 ns
d(off)
Switching times may increase for V
CE C 9.91 10.66 0.390 0.420
t (Clamp) > 0.8 V , higher T or 126 ns
D 3.54 4.08 0.139 0.161
fi CES J
increased R
E 5.85 6.85 0.230 0.270
E G 380 600 J
off
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
t 30 ns
d(on)
H 2.79 5.84 0.110 0.230
Inductive load, T = 125C
t 30 ns
J 0.64 1.01 0.025 0.040
J
ri
K 2.54 BSC 0.100 BSC
I = 16 A, V = 15 V
E 20N60B2 0.12 mJ
C GE
on
M 4.32 4.82 0.170 0.190
V = 0.8 V , R = 10
20N60B2D1 0.42 mJ
CE CES G
N 1.14 1.39 0.045 0.055
Switching times may increase for
Q 0.35 0.56 0.014 0.022
t 180 ns
d(off)
V (Clamp) > 0.8 V , higher T
R 2.29 2.79 0.090 0.110
CE CES J
t 210 ns
or increased R
fi
G
TO-263 (IXSA) Outline
E 970 J
off
R 0.66 K/W
thJC
R 0.3 K/W
thCS
Reverse Diode (FRED) Characteristic Values
(T = 25C, unless otherwise specified)
J
Symbol Test Conditions min. typ. max.
V I = 10A, V = 0 V T =150C 1.66 V
F F GE J
2.66 V
I I = 12A, V = 0 V, -di /dt = 100 A/s T = 100C 1.5 A
RM F GE F J
t V = 100 V T = 100C90 ns
rr R J
t I = 1 A; -di/dt = 100 A/s; V = 30 V 30 ns
rr F R
Dim. Millimeter Inches
Min. Max. Min. Max.
R 2.5 K/W
thJC
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
Note 1: Pulse test, t 300 s, duty cycle d 2 %
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
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