About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW20IH125DF


STMicroelectronics IGBT Transistors 1250V 20A trench gate field-stop IGBT
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USD 2.2476
Multiples of: 1

Single1.25 kV2.55 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
STGW60H65FB


IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT
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STMicroelectronics Availability : 9
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USD 4.7747
Multiples of: 1

Single650 V1.6 V20 V80 A250 nA375 W TO - 247 - 3Tube Through Hole - 40 C+ 175 CStgw60h65fb
STGB10NC60HDT4


IGBT Transistors N Ch 10A 600V
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STMicroelectronics Availability : 6
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USD 0.9513
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60hd
STGW30NC60WD


IGBT Transistors PowerMESH" IGBT
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USD 3.0166
Multiples of: 1

Single600 V2.1 V+/- 20 V 100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 CStgw30nc60wd
STGW19NC60HD


STMicroelectronics IGBT Transistors 19 A - 600 V Very fast IGBT
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USD 1.7858
Multiples of: 1

Single600 V +/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 C600 - 650V Igbts
STGW80V60DF


STMicroelectronics IGBT Transistors Trench gate V series 600V 80A HiSpd
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USD 4.3452
Multiples of: 1

Single600 V1.85 V20 V120 A250 nA  TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
STGW40H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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STMicroelectronics Availability : 1
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USD 11.8923
Multiples of: 1

Single1200 V2.1 V20 V80 A250 nA468 W TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 CStgw40h120df2
STGF10NB60SD


STMicroelectronics IGBT Transistors N-Ch 600 Volt 10 Amp
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USD 1.1252
Multiples of: 1

Single600 V1.8 V+/- 20 V20 A+/- 100 nA  TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 C600 - 650V Igbts
STGB15H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 15 A high speed
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STMicroelectronics Availability : 1
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USD 1.3798
Multiples of: 1

Single600 V1.6 V+/- 20 V30 A250 nA  D2PAKReelSiSmd/Smt115 W- 55 C+ 175 C600 - 650V Igbts
STGW35HF60W


IGBT Transistors Ultra Fast IGBT 35A 600V
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USD 1.6418
Multiples of: 1

  2.5 V20 V60 A100 nA200 W TO - 247TubeSiThrough Hole200 W- 55 C+ 150 CStgw35hf60w
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