About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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STGWA19NC60HD


IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode
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USD 2.6753

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Single600 V1.8 V+/- 20 V52 A+/- 100 nA208 W TO - 247TubeSiThrough Hole208 W- 55 C+ 150 CStgwa19nc60hd
STGW40H60DLFB


STMicroelectronics IGBT Transistors 600V 40A trench gate field-stop IGBT
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USD 2.6992

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Single600 V1.6 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 C600 - 650V Igbts
STGW30NC60VD


STMicroelectronics IGBT Transistors PowerMESH
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USD 2.7097

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Single600 V2.5 V+/- 20 V +/- 100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C600 - 650V Igbts
STGB30H60DF


Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
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USD 2.7121

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STGWT20H65FB


STMicroelectronics IGBT Transistors
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USD 2.7247

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Single650 V1.55 V20 V40 A250 nA  TO - 3PTubeSiThrough Hole168 W- 55 C+ 175 C600 - 650V Igbts
STGWA30H65FB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 30 A high speed
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USD 2.7461

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Single650 V1.55 V20 V60 A250 nA  TO - 247 - 3 SiThrough Hole260 W- 55 C+ 175 CStgwa30h65fb
STGY40NC60VD


STMicroelectronics IGBT Transistors N Ch 600V 50A Max247
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USD 2.7475

Multiples of: 600

Single600 V +/- 20 V    MAX247 - 3TubeSiThrough Hole - 55 C+ 150 C600 - 650V Igbts
STGW50HF60SD


IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces
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USD 2.7885

Multiples of: 30

Single600 V1.15 V+/- 20 V110 A+/- 100 nA284 W TO - 247Tube Through Hole - 55 C+ 150 CStgw50hf60sd
STGWA30HP65FB2


IGBT Transistors PTD IGBT & IPM
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USD 2.8101

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STGWA8M120DF3


IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
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USD 2.8112

Multiples of: 1

                
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