STGWA30HP65FB2 STMicroelectronics

STGWA30HP65FB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T = 175 C J Low V = 1.65 V(typ.) I = 30 A CE(sat) C Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive V temperature coefficient CE(sat) C(2, TAB) Applications Welding G(1) Power factor correction Description The newest IGBT 650 V HB2 series represents an evolution of the advanced E(3) NG1E3C2T proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V behavior at low current CE(sat) values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA30HP65FB2 Product summary Order code STGWA30HP65FB2 Marking G30HP65FB2 Package TO-247 long leads Packing Tube DS13149 - Rev 1 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGWA30HP65FB2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 50 A C I C Continuous collector current at T = 100 C 30 A C (1)(2) I Pulsed collector current 90 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage (t 10 s) 30 p Continuous forward current at T = 25 C 5 C I A F Continuous forward current at T = 100 C 5 C (1)(2) I Pulsed forward current 10 A FP P Total power dissipation at T = 25 C 167 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. 2. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.9 R thJC Thermal resistance junction-case diode 5 C/W R Thermal resistance junction-ambient 50 thJA DS13149 - Rev 1 page 2/15