About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGF10NC60SD


IGBT Transistors 10 A-600 V fast IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 1752
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USD 0.6881
Multiples of: 1

 600 V1.45 V20 V10 A100 nA25 W TO - 220 - 3 FPTube Through Hole   Stgf10nc60sd
STGP30NC60W


IGBT Transistors N-channel MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 1750
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USD 2.0432
Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CStgp30nc60w
STGB18N40LZT4


IGBT Transistors EAS 180 mJ-400 V
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STMicroelectronics Availability : 1056
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USD 1.0208
Multiples of: 1

Single360 V 12 V   Aec - Q101D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb18n40lz
STGB10NC60KDT4


IGBT Transistors N-channel MOSFET
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STMicroelectronics Availability : 1044
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USD 0.6854
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Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60kd
STGP15H60DF


IGBT Transistors Trench gate H series 600V 15A HiSpd
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STMicroelectronics Availability : 970
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USD 1.1409
Multiples of: 1

Single600 V1.6 V+/- 20 V30 A250 nA115 W TO - 220 - 3TubeSiThrough Hole115 W- 55 C+ 175 CStgp15h60df
STGF20H60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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STMicroelectronics Availability : 970
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USD 1.4642
Multiples of: 1

Single600 V2 V20 V40 A250 nA  TO - 220 - 3 FPTubeSiThrough Hole37 W- 55 C+ 175 C600 - 650V Igbts
STGB19NC60HDT4


STMicroelectronics IGBT Transistors N Ch 600V 19A
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STMicroelectronics Availability : 970
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USD 2.1259
Multiples of: 1000

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb19nc60hd
STGB40H65FB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
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STMicroelectronics Availability : 970
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USD 4.2021
Multiples of: 1

Single650 V1.6 V20 V80 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt283 W- 55 C+ 175 CStgb40h65fb
STGW60H65DFB


IGBT Transistors 600V 60A trench gate field-stop IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 669
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USD 3.562
Multiples of: 30

Single650 V1.6 V20 V80 A250 nA375 W TO - 247 - 3Tube Through Hole - 55 C+ 175 CStgw60h65
STGWT30H65FB


IGBT Transistors PTD IGBT & IPM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 582
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USD 1.82
Multiples of: 30

Single650 V1.75 V+/- 20 V30 A250 nA260 W TO - 3PTubeSiThrough Hole260 W- 55 C+ 175 CStgwt30h65fb
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