About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SGP07N120


IGBT Transistors FAST IGBT NPT TECH 1200V 8A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 3.6848
Multiples of: 1

Single1200 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CSgp07n120
IRG7PH35UD1MPBF


Transistor: IGBT; 1200V; 50A; 179W; TO247-3
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Infineon Availability : 0
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USD 3.6886
Multiples of: 122

      179 W         
IXA12IF1200TC


IGBT Transistors XPT IGBT Copack
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IXYS Availability : 0
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USD 3.71
Multiples of: 1

Single1200 V1.8 V20 V20 A500 nA  TO - 268 - AA - 4TubeSiSmd/Smt85 W- 55 C+ 150 CIxa12if1200
STGW20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics Availability : 0
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USD 3.7183
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Single600 V1.8 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
FGH60T65SHD-F155


IGBTs Trench Field Stop 650V 120A TO-247-3 RoHS
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ON Semiconductor Availability : 0
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USD 3.7207
Multiples of: 1

                
IRG4PH40KDPBF


Transistor: IGBT; 1200V; 15A; 160W; TO247-3
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Infineon Availability : 0
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USD 3.731
Multiples of: 4

      160 W         
IXYH40N65B3


Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
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IXYS Availability : 0
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USD 3.7351
Multiples of: 1

      300 W   Genx3, Planar, Xpt     
IKZ75N65NH5XKSA1


Transistor: IGBT; 650V; 75A; 197W; TO247-4; Series: H5
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Infineon Availability : 0
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USD 3.7417
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      197 W   Trenchstop 5    H5
IXYP30N65C3


IGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
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IXYS Availability : 0
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USD 3.7487
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Single650 V2.35 V20 V60 A100 nA  TO - 220 - 3 SiThrough Hole270 W- 55 C+ 175 C 
IXGP36N60A3


IGBT Transistors Disc IGBT PT-Low Frequency TO-220AB/FP
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IXYS Availability : 0
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USD 3.7487
Multiples of: 1

Single600 V1.4 V20 V200 A100 nA  TO - 220 - 3 SiThrough Hole220 W- 55 C+ 150 C 
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