INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low V trench IGBT Technology CE (ON) V = 1200V CES Low Switching Losses Square RBSOA I = 25A, T = 100C C C Ultra-Low V Diode F 1300Vpk Repetitive Transient Capacity G T = 150C J(max) 100% of the Parts Tested for I LM Positive V Temperature Co-Efficient E CE (ON) V typ. = 1.9V I = 20A CE(on) C Tight Parameter Distribution n-channel Lead Free Package Benefits C Device optimized for induction heating and soft switching applications High Efficiency due to Low V , low switching losses CE(on) and Ultra-low V F E Rugged transient performance for increased reliability C G Excellent current sharing in parallel operation TO-247AD Low EMI GC E Gate Collector Emitter Standard Pack Base part number Package Type Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES V Repetitive Transient Collector-to-Emitter Voltage 1300 (B R)Tr ansient I T = 25C Continuous Collector Current 50 C C I T = 100C Continuous Collector Current 25 C C I Pulse Collector Current, V =15V 150 A CM GE I Clamped Inductive Load Current, V =20V 80 LM GE I T = 25C Diode Continous Forward Current 50 F C T = 100C I Diode Continous Forward Current 25 F C I Diode Maximum Forward Current 80 FM V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C D C Maximum Power Dissipation 179 W P T = 100C Maximum Power Dissipation 71 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.70 JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.35 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 100A (BR)CES GE C V(B R)CES / T J 1.2 V/C V = 0V, I = 1mA (25C-150C) T emperature Coeff. of Breakdown Voltage GE C V Collector-to-Emitter Saturation Voltage 1.9 2.2 V I = 20A, V = 15V, T = 25C CE(on) C GE J 2.3 I = 20A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 600A GE(th) CE GE C gfe Forward Transconductance 22 S V = 50V, I = 20A, PW = 30s CE C I Collector-to-Emitter Leakage Current 1.0 100 A V = 0V, V = 1200V CES GE CE 120 V = 0V, V = 1200V, T = 150C GE CE J V Diode Forward Voltage Drop 1.15 1.26 V I = 20A FM F 1.08 I = 20A, T = 150C F J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 85 130 I = 20A g C Q Gate-to-Emitter Charge (turn-on) 15 20 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 35 50 V = 600V gc CC I = 20A, V = 600V, V = 15V C CC GE E Turn-Off Switching Loss 620 850 J R = 10 , L = 200H,L = 150nH, T = 25C off G S J E nergy losses include tail t Turn-Off delay time 160 180 ns I = 20A, V = 600V, V = 15V d(off) C CC GE t Fall time 80 105 R = 10 , L = 200H,L = 150nH, T = 25C f G S J I = 20A, V = 600V, V =15V C CC GE E Turn-Off Switching Loss 1120 J R = 10 , L = 200H,L = 150nH, T = 150C off G S J E nergy losses include tail t Turn-Off delay time 190 ns I = 20A, V = 600V, V = 15V d(off) C CC GE t Fall time 210 R = 10 , L = 200H,L = 150nH, T = 150C f G S J C Input Capacitance 1940 pF V = 0V ies GE C Output Capacitance 120 V = 30V oes CC C Reverse Transfer Capacitance 40 f = 1.0Mhz res T = 150C, I = 80A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CC Rg = 10 , V = +20V to 0V GE Notes: V = 80% (V ), V = 20V, R = 10. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T approximately 90C. J FBSOA operating conditions only. V = 0V, T = 75C, PW GE J