About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...206207208209210...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKZ75N65ES5XKSA1


Transistor: IGBT; 650V; 80A; 197W; TO247-4
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Infineon Availability : 0
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USD 4.3613
Multiples of: 1

      197 W   Trenchstop 5     
IRGP4650D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
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Infineon Availability : 0
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USD 4.3636
Multiples of: 25

Single600 V1.9 V20 V50 A100 nA  TO - 247 - 3TubeSiThrough Hole134 W- 55 C+ 175 CTrenchstop
IXGH72N60C3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 72A
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IXYS Availability : 0
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USD 4.3701
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        TO - 247AD - 3TubeSi    Ixgh72n60
STGWT60V60DF


IGBT Transistors 600V 60A Trench Gate Field-Stop IGBT
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STMicroelectronics Availability : 0
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USD 4.3836
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Single600 V2.35 V+/- 20 V80 A 375 W TO - 3P - 3TubeSiThrough Hole375 W- 55 C+ 175 CStgwt60v60df
IXGQ85N33PCD1


IGBT Transistors 340 Amps 330V
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IXYS Availability : 0
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USD 4.3852
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IXGH120N30B3


IGBT Transistors 120 Amps 300V
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IXYS Availability : 0
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USD 4.387
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Single300 V1.42 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgh120n30
IRGP4760DPBF


IGBT Transistors 650V UltraFast IGBT TO-247
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Infineon Availability : 0
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USD 4.3916
Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole    
IRGP20B120U-EP


IGBT Transistors 1200V UltraFast 5-40kHz Single IGBT
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USD 4.4009
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Single1.2 kV3.45 V+/- 20 V40 A100 nA300 W TO - 247TubeSiThrough Hole300 W- 55 C+ 150 C 
APT20GN60BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip Availability : 0
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USD 4.41
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      136 W   Field Stop     
IRG8P25N120KD-EPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 4.42
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Single1200 V1.7 V30 V40 A100 nA  TO - 247AD - 3TubeSiThrough Hole180 W- 40 C+ 150 C 
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