TM V = 600V GenX3 600V IGBT IXGH72N60C3 CES I = 72A C110 V 2.5V CE(sat) t = 55ns fi (typ) High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES G V Transient 30 V GEM C Tab E I T = 25C (Limited by Leads) 75 A C25 C I T = 110C (Chip Capability) 72 A C110 C I T = 25C, 1ms 360 A CM C G = Gate C = Collector E = Emitter Tab = Collector I T = 25C 50 A A C E T = 25C 500 mJ AS C SSOA V = 15V, T = 125C, R = 2 I = 150 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features P T = 25C 540 W C C z T -55 ... +150 C Optimized for Low Switching Losses J z Square RBSOA T 150 C JM z Avalanche Rated T -55 ... +150 C stg z International Standard Package T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages M Mounting Torque 1.13/10 Nm/lb.in. d z Weight 6g High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z High Frequency Power Inverters BV I = 250A, V = 0V 600 V CES C GE z UPS z Motor Drives V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z SMPS I V = V , V = 0V 50 A CES CE CES GE z PFC Circuits T = 125C 1 mA z J Battery Chargers z I V = 0V, V = 20V 100 nA Welding Machines GES CE GE z Lamp Ballasts V I = 50A, V = 15V 2.10 2.50 V CE(sat) C GE T = 125C 1.65 V J 2009 IXYS CORPORATION, All Rights Reserved DS99961B(11/09)IXGH72N60C3 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 33 55 S fs C CE C 4780 pF ies P C V = 25V, V = 0V, f = 1MHz 330 pF oes CE GE 1 2 3 C 117 pF res Q 174 nC g Q I = 50A, V = 15V, V = 0.5 V 33 nC ge C GE CE CES Q 72 nC gc e t 27 ns d(on) Inductive Load, T = 25C J t 37 ns Terminals: 1 - Gate 2 - Collector ri 3 - Emitter Tab - Collector E 1.03 mJ on I = 50A, V = 15V C GE Dim. Millimeter Inches t 77 130 ns Min. Max. Min. Max. d(off) A 4.7 5.3 .185 .209 t V = 480V, R = 2, Note 2 55 110 ns fi CE G A 2.2 2.54 .087 .102 1 E 0.48 0.95 mJ off A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 t 26 ns d(on) b 1.65 2.13 .065 .084 1 Inductive Load, T = 125 C t J 36 ns b 2.87 3.12 .113 .123 ri 2 E 1.48 mJ C .4 .8 .016 .031 on I = 50A, V = 15V C GE D 20.80 21.46 .819 .845 t 120 ns d(off) E 15.75 16.26 .610 .640 t 124 ns e 5.20 5.72 0.205 0.225 fi V = 480V, R = 2, Note 2 CE G L 19.81 20.32 .780 .800 E 0.93 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.23 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCK R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537