About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG7PH42UD1PBF


IGBT Transistors 1200V 85A
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Infineon Availability : 0
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USD 6.4814
Multiples of: 25

Single1.2 kV2 V+/- 30 V85 A   TO - 247 - 3TubeSiThrough Hole313 W- 55 C  
GT50J325(Q)


Trans IGBT Chip N-CH 600V 50A 3-Pin(3+Tab) TO-3P(LH)
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Toshiba Availability : 0
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USD 6.5016
Multiples of: 4

Single               
IXYH10N170C


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS Availability : 0
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USD 6.5071
Multiples of: 1

Single       TO - 247 - 3Tube Through Hole280 W- 55 C+ 175 C 
IRGP4063D1PBF


Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AC Tube
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Infineon Availability : 0
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USD 6.5653
Multiples of: 25

 600 V2.05 V20 V100 A100 nA  TO - 247 - 3Tube Through Hole330 W   
APT36GA60BD15


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 0
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USD 6.6207
Multiples of: 1

      290 W   POWER MOS 8®, PT     
IRG8P60N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 6.6359
Multiples of: 1

Single1200 V1.7 V30 V100 A400 nA420 W TO - 247AC - 3TubeSiThrough Hole420 W- 40 C+ 150 C 
APT27GA90BD15


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 0
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USD 6.6734
Multiples of: 1

Single900 V2.5 V30 V48 A100 nA  TO - 247 - 3TubeSiThrough Hole223 W- 55 C+ 150 C 
STGWA80H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 6.6888
Multiples of: 1

Single650 V1.6 V20 V120 A250 nA  TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
STGW80V60F


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 6.6888
Multiples of: 1

Single600 V1.85 V20 V120 A250 nA  TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
STGWT80H65FB


STMicroelectronics IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 6.6888
Multiples of: 1

Single650 V1.6 V20 V120 A250 nA  TO - 3PTubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
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