TO-247 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET 3 D Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche Energy Rated D dv Extreme / Rated dt Dual die (parallel) G Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS All Ratings per die: T = 25C unless otherwise speci ed. C APT36N90BC3G Symbol UNIT Parameter V 900 Volts Drain-Source Voltage DSS Continuous Drain Current T = 25C 36 C I D Continuous Drain Current T = 100C Amps 23 C 1 I Pulsed Drain Current 96 DM V 20 Volts Gate-Source Voltage Continuous GS Total Power Dissipation T = 25C 390 Watts C P D T ,T -55 to 150 Operating and Storage Junction Temperature Range J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 260 L dv / Drain-Source Voltage slope (V = 400V, I = 36A, T = 125C) 50 V/ns dt DS D J 2 I Avalanche Current 8.8 Amps AR 2 ( Id = 8.8A, Vdd = 50V ) E 2.9 Repetitive Avalanche Energy AR mJ ( Id = 8.8A, Vdd = 50V ) 1940 E Single Pulse Avalanche Energy AS STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Symbol MIN TYP MAX UNIT Drain-Source Breakdown Voltage (V = 0V, I = 250 A) BV 900 Volts GS D (DSS) 3 R Drain-Source On-State Resistance (V = 10V, I = 18A) 0.10 0.12 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 900V, V = 0V) - - 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 900V, V = 0V, T = 150C) - 50 - DS GS C Gate-Source Leakage Current (V = 20V, V = 0V) I - - 100 nA GS DS GSS Gate Threshold Voltage (V = V , I = 2.9mA) V 2.5 3 3.5 Volts DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.COOLMOS comprise a new family of transistors developed by In neon Technologies AG.COOLMO is a trade- mark of In neon Technologies AG Microsemi Website - APT36N90BC3G Symbol Characteristic MIN TYP MAX UNIT Test Conditions C Input Capacitance V = 0V 7463 iss GS C V = 25V pF Output Capacitance 6827 DS oss f = 1 MHz C Reverse Transfer Capacitance 167 rss Q 4 V = 10V 252 g Total Gate Charge GS Q V = 450V nC Gate-Source Charge DD 38 gs I = 36A 25C Q D gd Gate-Drain Mille) Charge 112 INDUCTIVE SWITCHING t Turn-on Delay Time 70 d(on) V = 15V GS t 20 r Rise Time ns V = 600V DD t d(off) Turn-off Delay Time 400 I = 36A 25C D t Fall Time 25 R = 4.3 f G E 5 INDUCTIVE SWITCHING 25C 1500 on Turn-on Switching Energy V = 600V, V = 15V DD GS E Turn-off Switching Energy I = 36A, R = 4.3 750 off D G J INDUCTIVE SWITCHING 125C 5 E Turn-on Switching Energy 2130 on V = 600V, V = 15V DD GS E Turn-off Switching Energy I = 36A, R = 4.3 867 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 36 S Amps 1 I Pulsed Source Current (Body Diode) SM 96 3 V Diode Forward Voltage (V = 0V, I = 18A) SD Volts GS S 0.8 1.2 dv dv 6 / Peak Diode Recovery / V/ns 10 dt dt Reverse Recovery Time T 930 = 25C t j ns di rr (I = -36A, / = 100A/ s) S dt 1230 T = 125C j Reverse Recovery Charge T = 25C j 35 Q C di rr (I = -36A, / = 100A/ s) S dt T = 125C j 44 Peak Recovery Current T = 25C 70 I j Amps di RRM (I = -36A, / = 100A/ s) S dt T = 125C 68 j THERMAL CHARACTERISTICS UNIT Symbol Characteristic MIN TYP MAX R Junction to Case 0.3 JC C/W R Junction to Ambient 31 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 See MIL-STD-750 Method 3471 temperature 5 Eon includes diode reverse recovery. 2 Repetitive avalanche causes additional power losses that can 6 Maximum 125C diode commutation speed = di/dt 600A/ s be calculated as P = E *f . Pulse width tp limited by Tj max. AV AR 3 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.35 0.30 D = 0.9 0.25 0.7 0.20 0.5 Note: 0.15 t 1 0.3 0.10 t 2 t 1 t 0.05 Duty Factor D = / 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -2 -4 -5 -3 10 10 0.1 10 10 10 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 050-8068 Rev C 3-2012 Z , THERMAL IMPEDANCE (C/W) JC P DM