About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYX50N170C


Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
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IXYS Availability : 0
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USD 29.302
Multiples of: 1

      1.5 kW   Xpt     
IXXN110N65B4H1


IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
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IXYS Availability : 0
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USD 29.3135
Multiples of: 1

Single650 V2.1 V30 V215 A100 nA  SOT - 227TubeSiSmd/Smt750 W- 55 C+ 150 CIxxn110n65
IXLF19N250A


IGBT Transistors High Voltage IGBT 2500V; 19A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 0
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USD 29.6341
Multiples of: 25

Single2.5 kV3.2 V+/- 20 V32 A500 nA  ISOPLUS I4 - PAC - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxlf19n250
IXYN75N65C3D1


IGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini
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IXYS Availability : 0
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USD 30.114
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Single650 V1.8 V20 V150 A100 nA  SOT - 227B - 4 SiScrew Mount600 W- 55 C+ 175 C 
MG75U12MRGJ-A2-0000


IGBTs ROHS
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Yangjie Availability : 0
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USD 30.2955
Multiples of: 1

                
VS-GT140DA60U


IGBT Transistors 600 Volt 140 Amp
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Vishay Availability : 0
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USD 30.2977
Multiples of: 80

          FRED Pt®     
GA35XCP12-247


IGBT Transistors 1200V 35A SIC IGBT CoPak
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GeneSiC Semiconductor Availability : 0
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USD 30.5376
Multiples of: 510

 1200 V3 V20 V 0.3 mA  TO - 247ABTubeSicThrough Hole - 40 C+ 150 CGa35xcp12
GPU75HF120D1SE


IGBTs 34mm RoHS
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Daxin Semiconductor Availability : 0
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USD 30.6266
Multiples of: 1

                
APT70GR120J


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 30.6337
Multiples of: 1

          NPT, POWER MOS 8®, Ultra Fast NPT - IGBT®     
APT75GP120B2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 0
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USD 30.648
Multiples of: 1

Single1.2 kV3.3 V30 V100 A100 nA  T - MAX - 3TubeSiThrough Hole1.042 kW- 55 C+ 150 C 
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