About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SPT50N65F1AT8TL


TO-247-3 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS Availability : 29
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USD 2.2882

Multiples of: 1

                
NGTB30N60SWG


ON Semiconductor IGBT Transistors 600V30A IGBT FSI TO-247
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ON Semiconductor Availability : 29
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USD 2.5684

Multiples of: 1

Single600 V2.6 V20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole189 W- 55 C+ 150 C 
SPT25N120T1T8TL


TO-247-3 IGBTs ROHS
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SPS Availability : 29
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USD 2.7023

Multiples of: 1

                
RGW40TK65DGVC11


ROHM Semiconductor
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ROHM Availability : 29
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USD 2.8497

Multiples of: 1

                
SPT75N65F1


TO-247 IGBTs ROHS
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SPTECH Availability : 29
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USD 2.9282

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FGP3440G2_F085


Fairchild Semiconductor IGBT Transistors ECOSPARK 2 IGNITION IGBT
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ON Semiconductor Availability : 29
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USD 2.9853

Multiples of: 10

Single400 V1.6 V+/- 10 V26.9 A   TO - 220AB - 3TubeSiThrough Hole166 W- 40 C+ 175 CFgp3440g2_F085
RGW40TK65GVC11


ROHM Semiconductor
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ROHM Availability : 29
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USD 3.276

Multiples of: 1

                
SPT40N120F1AT8TL


TO-247 IGBTs ROHS
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SPS Availability : 29
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USD 3.64

Multiples of: 1

                
RGTV80TS65DGC11


ROHM Semiconductor
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ROHM Availability : 29
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USD 4.2088

Multiples of: 1

                
IKY40N120CS6XKSA1


IGBT Transistors INDUSTRY 14
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Infineon Availability : 29
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USD 5.7077

Multiples of: 1

Single1200 V1.85 V20 V80 A600 nA  TO - 247 - 4TubeSiThrough Hole500 W- 40 C+ 175 CIgbt6
APT25GT120BRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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Microchip Availability : 29
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USD 7.348

Multiples of: 1

Single1.2 kV3.2 V30 V54 A120 nA  TO - 247 - 3TubeSiThrough Hole347 W- 55 C+ 150 C 
IXGT6N170A


IGBT Transistors 12 Amps 1700 V 7 V Rds
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IXYS Availability : 29
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USD 8.1924

Multiples of: 1

Single1700 V 20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt6n170
BGH40N120HS1


Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
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BASiC Semiconductor Availability : 29
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USD 8.652

Multiples of: 1

          Trench, Field Stop, SiC SBD     
BGH75N65ZF1


Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
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BASiC Semiconductor Availability : 29
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USD 11.214

Multiples of: 1

      405 W   Trench, Field Stop, SiC SBD     
STGYA75H120DF2


IGBT Transistors Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT
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STMicroelectronics Availability : 29
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USD 11.6894

Multiples of: 1

                
FGH40T120SMD-F155


TO-247-3 IGBTs ROHS
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ON Semiconductor Availability : 29
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USD 14.462

Multiples of: 1

Single1200 V2 V25 V80 A400 nA  TO - 247G03 - 3TubeSiThrough Hole555 W- 55 C+ 175 CFgh40t120smd
APT50GT120LRG


IGBT Transistors IGBT NPT Medium Frequency Single 1200 V 50 A TO-264
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Microchip Availability : 29
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USD 17.784

Multiples of: 1

      625 W   NPT     
IXYX120N120B3


IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
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IXYS Availability : 29
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USD 35.518

Multiples of: 1

Single1.2 kV1.8 V20 V320 A200 nA  PLUS - 247 - 3 SiThrough Hole1.5 kW- 55 C+ 175 C 
IXBX75N170


IGBT Transistors BIMOSFETS 1700V 200A
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IXYS Availability : 29
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USD 76.179

Multiples of: 1

        PLUS 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbx75n170
IXBH10N300HV


IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-247AD
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IXYS Availability : 17
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USD 13.0919

Multiples of: 1

Single3 kV2.2 V20 V34 A100 nA  TO - 247HV - 3 SiThrough Hole180 W- 55 C+ 150 C 
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