About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRLR024NTRPBF


MOSFET N Trench 55V 17A 2V @ 250uA 65 mΩ @ 10A,10V TO-252-2 (DPAK) RoHS
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Infineon Availability : 47027
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USD 0.2241
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17 A55 V110 mOhmsN - Channel  - 55 C+ 175 C38 WSmd/SmtDPAKReelSi1 Channel16 V10 nCEnhancement  
BSL215C H6327


Infineon Technologies MOSFET SMALL SIGNALP-CH
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Infineon Availability : 46996
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USD 0.1875
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1.5 A20 V108 mOhms , 102 mOhmsP - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtTSOP - 6Reel-1 Channel12 V730 pC , - 3 nCEnhancement  
IRLIZ34NPBF


Transistor: N-MOSFET; unipolar; 55V; 20A; 31W; TO220FP
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Infineon Availability : 46031
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USD 0.5119
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22 A55 V35 mOhmsN - Channel 2 V- 55 C+ 175 C37 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel16 V16.7 nC   
IRF7341TRPBF


MOSFET 2 N Channel (Dual) 55V 4.7A 1V @ 250uA 50 mΩ @ 4.7A,10V SOIC-8_150mil RoHS
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Infineon Availability : 45539
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USD 0.2239
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4.7 A55 V56 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC   
IRF7769L1TRPBF


International Rectifier MOSFET 60V N-Ch 124A 3.5 mOhm 200nC
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Infineon Availability : 45436
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USD 2.53
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124 A100 V2.8 mOhmsN - Channel20 V2 V- 55 C+ 175 C125 WSmd/SmtDirectfet - 4ReelSi1 Channel20 V200 nCEnhancement Directfet
IPD60R600C6ATMA1


Infineon Technologies MOSFET N-Ch 600V 20.2A DPAK-2
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Infineon Availability : 45327
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USD 0.6164
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7.3 A600 V540 mOhmsN - Channel 2.5 V- 55 C+ 150 C63 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V20.5 nCEnhancement Coolmos
IPD85P04P407ATMA2


P-Channel 40V 85A (Tc) 88W (Tc) Surface Mount PG-TO252-3-313
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Infineon Availability : 45144
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USD 0.8429
Multiples of: 1

          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®Mosfet (Metal Oxide)      
BSC004NE2LS5ATMA1


MOSFET TRENCH <= 40V
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Infineon Availability : 44390
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USD 1.2933
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479 A25 V540 uOhmsN - Channel 1.5 V- 55 C+ 175 C188 WSMD/SMTTDSON - 8 - FLReel , Cut TapeSi1 Channel- 20 V , + 20 V238 nCEnhancement  
BSS205NH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
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Infineon Availability : 44261
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USD 0.0759
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            Optimos 2      
Hot IRF4905PBF


MOSFET P Trench 55V 74A 4V @ 250uA 20 mΩ @ 38A,10V TO-220 (TO-220-3) RoHS
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Infineon Availability : 42112
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USD 0.6072
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74 A55 V20 mOhmsP - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
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