IRF7769L1TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) Applications V V R RoHS Compliant, Halogen Free DSS GS DS(on) Lead-Free (Qualified up to 260C Reflow) 100V min 20V max 2.8m 10V Ideal for High Performance Isolated Converter Q Q V Primary Switch Socket g tot gd gs(th) Optimized for Synchronous Rectification 200nC 110nC 2.7V Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) S S S S Dual Sided Cooling Compatible G D D S S Compatible with existing Surface Mount Techniques S S Industrial Qualified DirectFET ISOMETRIC L8 Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description TM The IRF7769L1TRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Ordering Information Standard Pack Part number Package Type Note Form Quantity IRF7769L1TRPbF DirectFET Large Can Tape and Reel 4000 TR suffix Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 DS V Gate-to-Source Voltage 20 GS V I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 124 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 88 D C GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 20 A D A GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 375 D C GS I Pulsed Drain Current 500 DM E Single Pulse Avalanche Energy 260 mJ AS I Avalanche Current 74 A AR 12.00 3.10 I = 74A T = 25C D A 10.00 V = 7.0V GS 8.00 3.00 V = 8.0V GS 6.00 V = 10V GS T = 125C J 2.90 4.00 V = 15V GS 2.00 T = 25C J 2.80 0.00 20 40 60 80 100 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 I , Drain Current (A) D V , Gate-to-Source Voltage (V) GS Fig 2. Typical On-Resistance vs. Drain Current Fig 1. Typical On-Resistance vs. Gate Voltage Notes TC measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.09mH, R = 25 , I = 74A. J G AS Surface mounted on 1 in. square Cu board, steady state. 1 2016-10-14 Typical R (on), (m DS Typical R ( m DS(on) IRF7769L1TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 2mA V / T DSS J D R Static Drain-to-Source On-Resistance 2.8 3.5 m V = 10V, I = 74A DS(on) GS D V Gate Threshold Voltage 2.0 2.7 4.0 V GS(th) V = V , I = 250A DS GS D V / T Gate Threshold Voltage Temp. Coefficient -10 mV/C GS(th) J 20 V = 100 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 410 S V = 25V, I = 74A DS D Q Total Gate Charge 200 300 g Q Pre Vth Gate-to-Source Charge 30 V = 50V gs1 DS Q Post Vth Gate-to-Source Charge 9.0 nC V = 10V gs2 GS Q Gate-to-Drain Charge 110 165 I = 74A gd D Q Gate Charge Overdrive 51 See Fig.9 godr Q Switch Charge (Q Q 119 sw gs2 + gd) Q Output Charge 53 nC V = 16V,V = 0V oss DS GS R Gate Resistance 1.5 G t Turn-On Delay Time 44 V = 50V, V = 10V d(on) DD GS t Rise Time 32 I = 74A r D ns t Turn-Off Delay Time 92 R = 1.8 d(off) G t Fall Time 41 f C Input Capacitance 11560 V = 0V iss GS C Output Capacitance 1240 V = 25V oss DS C Reverse Transfer Capacitance 590 = 1.0MHz rss pF C Output Capacitance 6665 V =0V, V = 1.0V, =1.0MHz oss GS DS C Output Capacitance 690 V =0V, V = 80V, =1.0MHz oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 124 S (Body Diode) showing the A Pulsed Source Current integral reverse I 500 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 74A,V = 0V SD J S GS t Reverse Recovery Time 75 112 ns T = 25C ,I = 74A,V = 50V rr J F DD Q Reverse Recovery Charge 220 330 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2% 2 2016-10-14