About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRFZ48NPBF


Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
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Infineon Availability : 33212
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USD 0.4542

Multiples of: 1

            Hexfet®      
BSS214N H6327


Infineon Technologies MOSFET N-Ch 20V 1.5A SOT-23-3
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Infineon Availability : 32780
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USD 0.0632

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1.5 A20 V106 mOhmsN - Channel 950 mV- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 3Reel-1 Channel+/- 12 V800 pCEnhancementAec - Q101 
BSS806NH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
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Infineon Availability : 32773
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USD 0.0701

Multiples of: 1

            Optimos 2      
Hot IRFP064NPBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 59A,10V TO-247 (AC) RoHS
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Infineon Availability : 32609
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USD 0.797

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98 A55 V8 mOhmsN - Channel    150 WThrough HoleTO - 247ACTubeSi1 Channel20 V113.3 nC   
IPD090N03LGATMA1


MOSFET N-Ch 30V 40A DPAK-2
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Infineon Availability : 31923
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USD 0.2852

Multiples of: 1

40 A30 V7.5 mOhmsN - Channel  - 55 C+ 175 C42 WSmd/SmtTO - 252ReelSi1 Channel20 V15 nC  Optimos
BSC160N15NS5ATMA1


MOSFET MV POWER MOS
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Infineon Availability : 31848
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USD 1.2075

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56 A150 V16 mOhmsN - Channel 3 V- 55 C+ 150 C96 WSmd/SmtTDSON - 8ReelSi1 Channel10 V19 nCEnhancement Optimos
BSC011N03LSATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
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Infineon Availability : 31731
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USD 0.7808

Multiples of: 1

            Optimos      
BSZ040N04LS G


MOSFET OptiMOS 3 PWR TRANS 40V 40A
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Infineon Availability : 31724
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USD 0.5707

Multiples of: 1

40 A40 V3.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V64 nCEnhancement Optimos
IRF7503TRPBF


Mosfet Array 2 N-Channel (Dual) 30V 2.4A 1.25W Surface Mount Micro8™
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Infineon Availability : 31657
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USD 0.2426

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2.4 A30 V135 mOhmsN - Channel  - 55 C+ 150 C1.25 WSmd/SmtMICRO - 8ReelSi2 Channel20 V7.8 nCEnhancement  
IRL520NSTRLPBF


MOSFET MOSFT 100V 10A 180mOhm 13.3nC LogLv
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Infineon Availability : 26569
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USD 0.529

Multiples of: 1

10 A100 V180 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel16 V13.3 nC   
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