BSS214N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 140 m DS(on),max GS Enhancement mode V =2.5 V 250 GS Super Logic level (2.5V rated) I 1.5 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS214N PG-SOT23 H6327: 3000 pcs/ reel SVs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 1.5 A D A T =70 C 1.2 A I T =25 C Pulsed drain current 6 D,pulse A Avalanche energy, single pulse E I =1.5 A, R =25 3.7 mJ AS D GS I =1.5 A, V =16 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 12 V GS Power dissipation P T =25 C 0.5 W tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.3 page 1 2011-07-08BSS214N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W minimal footprint thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V = 0 V, I = 250 A 20 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =3.7 A 0.7 0.95 1.2 GS(th) DS GS D V =20 V, V =0 V, DS GS Drain-source leakage current I -- 1 A DSS T =25 C j V =20 V, V =0 V, DS GS - - 100 T =150 C j I V =12 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS R V =2.5 V, I =0.7 A Drain-source on-state resistance - 175 250 m DS(on) GS D V =4.5 V, I =1.5 A - 106 140 GS D V >2 I R , DS D DS(on)max Transconductance g -4 - S fs I =1.2 A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long they are present on both sides of the PCB. Rev 2.3 page 2 2011-07-08