About MOSFET

On Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTJS4151PT1G


MOSFET -20V -4.2A P-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 11640
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USD 0.0978

Multiples of: 3000

3.3 A20 V205 mOhmsP - Channel 400 mV- 55 C+ 150 C1 WSmd/SmtSC - 88ReelSi1 Channel- 1.8 V10 nCEnhancement  
NVS4001NT1G


ON Semiconductor MOSFET
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ON Semiconductor Availability : 8730
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USD 0.0723

Multiples of: 3000

270 mA30 V1.5 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4 V0.9 nCEnhancementAec - Q101 
NVTJD4001NT1G


ON Semiconductor MOSFET NFET 30V 250MA 1.5OH
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ON Semiconductor Availability : 8730
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USD 0.0883

Multiples of: 3000

250 mA30 V1.5 OhmsN - Channel     Smd/SmtSOT - 363 - 6Reel       
NTJD4105CT2G


ON Semiconductor MOSFET 20V-8V 0.63A-.775A Complementary
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ON Semiconductor Availability : 8730
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USD 0.1434

Multiples of: 3000

630 mA , - 775 mA27 v , - 10.5 V290 mOhms , 220 mOhmsN - Channel, P - Channel 0.92 v , - 0.83 V- 55 C+ 150 C270 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel12 v , 8 V1.3 nC , 2.2 nCEnhancement  
FDN359AN


Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
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ON Semiconductor Availability : 8730
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USD 0.1588

Multiples of: 3000

   N Channel               
FDG6322C


MOSFET SC70-6 COMP N-P-CH
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ON Semiconductor Availability : 8730
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USD 0.1609

Multiples of: 3000

220 mA , - 410 mA25 V4 OhmsN - Channel, P - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 6Cut TapeSi2 Channel8 V Enhancement  
FDC642P


MOSFET SSOT-6 P-CH -20V
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ON Semiconductor Availability : 8730
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USD 0.1991

Multiples of: 1

4 A20 V65 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel8 V Enhancement Powertrench
FDC602P


MOSFET P-Ch PowerTrench Specified 2.5V
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ON Semiconductor Availability : 8730
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USD 0.2458

Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSSOT - 6Reel       
2N7002K


MOSFET 60V, 115mA N-Chan
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ON Semiconductor Availability : 5820
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USD 0.0467

Multiples of: 3000

300 mA60 V2 OhmsN - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V Enhancement  
FDN339AN


Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
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ON Semiconductor Availability : 2910
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USD 0.155

Multiples of: 3000

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