About MOSFET

Toshiba MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK39J60W5,S1VQ


Toshiba MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 13
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USD 7.5106

Multiples of: 1

38.8 A600 V55 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C270 WThrough HoleTO - 3P - 3ReelSi1 Channel30 V110 nCEnhancement  
Hot TK31E60W,S1VX


Toshiba MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
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Toshiba Availability : 12
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USD 4.602

Multiples of: 1

30.8 A600 V73 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C230 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V86 nCEnhancement Dtmosiv
Hot TK35N65W5,S1F


Toshiba MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS
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Toshiba Availability : 12
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USD 4.9387

Multiples of: 1

35 A650 V80 mOhmsN - Channel 3 v to 4.5 V- 55 C+ 150 C270 WThrough HoleTO - 247 - 3 Si1 Channel30 V115 nCEnhancement  
TK650A60F,S4X


MOSFET N-Ch TT-MOSIX 600V 45W 1320pF 11A
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Toshiba Availability : 11
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USD 0.6027

Multiples of: 1

11 A600 V650 mOhmsN - Channel 2 V-+ 150 C45 WThrough HoleTO - 220SIS - 3TubeSi1 Channel30 V34 nCEnhancement  
TK4A60DB(S4PHI,X,S



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Toshiba Availability : 9
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USD 1.0062

Multiples of: 1

                   
TPH3300CNH,L1Q


N-Channel 150 V 18A (Ta) 1.6W (Ta), 57W (Tc) Surface Mount 8-SOP Advance (5x5)
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Toshiba Availability : 9
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USD 1.4667

Multiples of: 1

18 A150 V28 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C57 WSmd/SmtSOP - 8ReelSi1 Channel20 V10.6 nCEnhancement  
SSM3J46CTB(TPL3)


Toshiba MOSFET Small Sig FET 1.5V Low RDS 250mOhm
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Toshiba Availability : 8
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USD 0.2216

Multiples of: 1

- 2 A- 20 V103 mOhmsP - Channel     Smd/SmtSOT - 883 - 3ReelSi1 Channel     
TPH4R008NH,L1Q


N-Channel 80 V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)
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Toshiba Availability : 8
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USD 2.4766

Multiples of: 1

100 A80 V3.3 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C78 WSmd/SmtSOP - 8ReelSi1 Channel20 V59 nC  Umosviii
TK6A60D


MOSFETs
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Toshiba Availability : 7
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USD 0.9211

Multiples of: 1

                   
SSM3K347R,LF


MOSFET LowON Res MOSFET ID=2A VDSS=38V
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Toshiba Availability : 6
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USD 0.0818

Multiples of: 1

2 A38 V280 mOhmsN - Channel 1.4 V + 150 C1 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel20 V2.5 nCEnhancement  
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