Best On Semiconductor and SiC MOSFETs in USA, Australia & India.

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Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NTHL020N120SC1

SiC MOSFETs 20MW 1200V

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 511
Ship by Thu. 12 Sep to Mon. 16 Sep

September 2024

September 2024
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USD 37.0441

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

103 A

28 mOhms

- 15 V , + 25 V

4.3 V

203 nC

- 55 C

+ 175 C

535 W

Enhancement

EliteSiC

NVBG1000N170M1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 475
Ship by Thu. 12 Sep to Mon. 16 Sep

September 2024

September 2024
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35	25	26	27	28	29	30	31
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USD 3.768

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.7 kV

4.3 A

1.43 Ohms

- 15 V , + 25 V

3.2 V

14 nC

- 55 C

+ 175 C

25 W

Enhancement

EliteSiC

NTHL022N120M3S

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 452
Ship by Thu. 12 Sep to Mon. 16 Sep

September 2024

September 2024
	S	M	T	W	T	F	S
35	25	26	27	28	29	30	31
36	1	2	3	4	5	6	7
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39	22	23	24	25	26	27	28
40	29	30	1	2	3	4	5

USD 12.903

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

68 A

30 mOhms

- 10 V , + 22 V

4.4 V

139 nC

- 55 C

+ 175 C

352 W

Enhancement

EliteSiC

NVH4L095N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 70 mohm, 650V, M2, TO247-4L Silicon Carbide (SiC) MOSFET - 95 mohm, 650 V, M2, TO-247-4L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 436
Ship by Thu. 12 Sep to Mon. 16 Sep

September 2024

September 2024
	S	M	T	W	T	F	S
35	25	26	27	28	29	30	31
36	1	2	3	4	5	6	7
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38	15	16	17	18	19	20	21
39	22	23	24	25	26	27	28
40	29	30	1	2	3	4	5

USD 8.688

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

31 A

105 mOhms

- 5 V , + 18 V

4.3 V

50 nC

- 55 C

+ 175 C

64 W

Enhancement

EliteSiC

NVHL060N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 60mohm, 650 V, M2, TO247-3L SiC MOSFET, 650V, 44mohm, 47A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 436
Ship by Thu. 12 Sep to Mon. 16 Sep

September 2024

September 2024
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35	25	26	27	28	29	30	31
36	1	2	3	4	5	6	7
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39	22	23	24	25	26	27	28
40	29	30	1	2	3	4	5

USD 16.044

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

47 A

44 mOhms

- 8 V , + 22 V

4.3 V

74 nC

- 55 C

+ 175 C

176 W

Enhancement

EliteSiC

NVH4L025N065SC1

SiC MOSFETs Silicon Carbide MOSFET, N-Channel - EliteSiC ,21mohm, 650V, M2, TO247-4L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 436
Ship by Thu. 12 Sep to Mon. 16 Sep

September 2024

September 2024
	S	M	T	W	T	F	S
35	25	26	27	28	29	30	31
36	1	2	3	4	5	6	7
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40	29	30	1	2	3	4	5

USD 21.108

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

99 A

28.5 mOhms

- 8 V , + 22 V

4.3 V

164 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

NVHL025N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 25mohm, 650V, M2, TO247-3L SiC MOSFET, 650V, 19mohm, 99A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 434
Ship by Thu. 12 Sep to Mon. 16 Sep

September 2024

September 2024
	S	M	T	W	T	F	S
35	25	26	27	28	29	30	31
36	1	2	3	4	5	6	7
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39	22	23	24	25	26	27	28
40	29	30	1	2	3	4	5

USD 33.564

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

99 A

19 mOhms

- 8 V , + 22 V

4.3 V

164 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

NVHL070N120M3S

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 428
Ship by Thu. 12 Sep to Mon. 16 Sep

September 2024

September 2024
	S	M	T	W	T	F	S
35	25	26	27	28	29	30	31
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38	15	16	17	18	19	20	21
39	22	23	24	25	26	27	28
40	29	30	1	2	3	4	5

USD 18.936

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

34 A

87 mOhms

- 10 V , + 22 V

4.4 V

57 nC

- 55 C

+ 175 C

160 W

Enhancement

EliteSiC

NVHL015N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-3L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 426
Ship by Thu. 12 Sep to Mon. 16 Sep

September 2024

September 2024
	S	M	T	W	T	F	S
35	25	26	27	28	29	30	31
36	1	2	3	4	5	6	7
37	8	9	10	11	12	13	14
38	15	16	17	18	19	20	21
39	22	23	24	25	26	27	28
40	29	30	1	2	3	4	5

USD 50.256

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

163 A

12 mOhms

- 8 V , + 22 V

4.3 V

283 nC

- 55 C

+ 175 C

643 W

Enhancement

EliteSiC

NTH4L080N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 337
Ship by Fri. 06 Sep to Thu. 12 Sep

September 2024