About SiC MOSFETs

On Semiconductor SiC MOSFETs

SiC MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NTH4L014N120M3P


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 14mohm, 1200V, M3P, TO-247-4L
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ON Semiconductor Availability : 221
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USD 21.6216
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Through Hole N - Channel1 Channel1.2 kV127 A20 mOhms- 10 V , + 22 V4.63 V329 nC- 55 C+ 175 C686 WEnhancement EliteSiC
NTHL030N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L
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USD 7.1995
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Through Hole   1.2 kV 30 Ohms        EliteSiC
NTHL040N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 195
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USD 6.256
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Through Hole N - Channel1 Channel1.2 kV51 A52 mOhms- 10 V , + 22 V4.4 V70 nC- 55 C+ 175 C329 WEnhancement EliteSiC
NVH4L030N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 30 mohm, 1200 V, M3S, TO247-4L Silicon Carbide (SiC) MOSFET- EliteSiC, 30 mohm, 1200 V, M3S, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 191
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USD 18.8302
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV60 A28.5 mOhms- 8 V , + 22 V3.13 V107 nC- 55 C+ 175 C308 WEnhancement EliteSiC
NTBG1000N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
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ON Semiconductor Availability : 169
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USD 2.5413
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SMD/SMT N - Channel1 Channel1.7 kV4.3 A960 mOhms- 15 V , + 25 V4.3 V13.9 nC- 55 C+ 175 C51 WEnhancement EliteSiC
NVBG045N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK-7L
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ON Semiconductor Availability : 121
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USD 30.5429
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SMD/SMT N - Channel1 Channel650 V62 A50 mOhms- 8 V , + 22 V4.3 V105 nC- 55 C+ 175 C242 WEnhancement EliteSiC
NTHL020N090SC1


SiC MOSFETs 20MOHM 900V
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ON Semiconductor Availability : 97
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USD 21.828
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Through Hole N - Channel1 Channel900 V118 A28 mOhms- 8 V , + 22 V4.3 V196 nC- 55 C+ 175 C503 WEnhancement EliteSiC
NVBG025N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L
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ON Semiconductor Availability : 97
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USD 37.1021
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V106 A28.5 mOhms- 8 V , + 22 V4.3 V164 nC- 55 C+ 175 C395 WEnhancement EliteSiC
NVH4L040N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, TO247-4L SiC MOSFET 1200 V 40 mohm M3S Series in TO247-4LD package
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USD 14.4454
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Through Hole N - Channel1 Channel1.2 kV44 A40.8 mOhms- 8 V , + 22 V3.22 V75.2 nC- 55 C+ 175 C235 WEnhancement EliteSiC
NVH4L060N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 44mohm, 650V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 9.8629
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Through Hole N - Channel1 Channel650 V47 A70 mOhms- 8 V , + 22 V4.3 V74 nC- 55 C+ 175 C176 WEnhancement EliteSiC
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