MOSFET SiC Power, Single N-Channel, TO247-3L 900 V, 20 m , 118 A NTHL020N090SC1 Features www.onsemi.com Typ. R = 20 m V = 15 V DS(on) GS Typ. R = 16 m V = 18 V DS(on) GS Ultra Low Gate Charge (Q = 196 nC) G(tot) V R MAX I MAX (BR)DSS DS(ON) D Low Effective Output Capacitance (C = 296 pF) oss 900 V 28 m 15 V 118 A 100% UIL Tested RoHS Compliant D Typical Applications UPS DC/DC Converter Boost Inverter G MAXIMUM RATINGS (T = 25C unless otherwise noted) J S Parameter Symbol Value Unit NCHANNEL MOSFET DraintoSource Voltage V 900 V DSS GatetoSource Voltage V +22/8 V GS Recommended Operation Val- T < 175C V +15/5 V C GSop ues of Gate Source Voltage Continuous Drain Steady T = 25C I 118 A C DC State Current R JC G Power Dissipation P 503 W D DC S R JC TO247 LONG LEADS Continuous Drain Steady T = 100C I 83 A C DC CASE 340CX State Current R JC Power Dissipation P 251 W DC MARKING DIAGRAM R JC Pulsed Drain Current (Note 2) T = 25C I 472 A A DM Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Y&Z&3&K Source Current (Body Diode) I 153 A S NTHL020 Single Pulse DraintoSource Avalanche Ener- E 264 mJ N090SC1 AS gy (I = 23 A , L = 1 mH) (Note 3) L pk Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values Y = ON Semiconductor Logo shown, they are not constants and are only valid for the particular conditions noted. &Z = Assembly Plant Code 2. Repetitive rating, limited by max junction temperature. &3 = Date Code (Year & Week) 3. E of 162 mJ is based on starting T = 25C L = 1 mH, I = 23 A, V = AS J AS DD &K = Lot 100 V, V = 15 V. GS NTHL020N090SC1 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2021 Rev. 2 NTHL020N090SC1/DNTHL020N090SC1 Table 1. THERMAL CHARACTERISTICS Parameter Symbol Max Units Thermal Resistance JunctiontoCase (Note 1) R 0.30 C/W JC Thermal Resistance JunctiontoAmbient (Note 1) R 40 C/W JA Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 900 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, refer to 25C 500 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 100 A DSS GS J V = 900 V DS T = 175C 250 A J GatetoSource Leakage Current I V = +22/8 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage V V = V , I = 20 mA 1.8 2.7 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +15 V GOP DraintoSource On Resistance R V = 15 V, I = 60 A, T = 25C 20 28 m DS(on) GS D J V = 18 V, I = 60 A, T = 25C 16 GS D J V = 15 V, I = 60 A, T = 175C 27 GS D J Forward Transconductance g V = 20 V, I = 60 A 49 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, 4415 pF ISS GS V = 450 V DS Output Capacitance C 296 OSS Reverse Transfer Capacitance C 24 RSS Total Gate Charge Q V = 5/15 V, V = 720 V, 196 nC G(TOT) GS DS I = 60 A D Threshold Gate Charge Q 42 G(TH) GatetoSource Charge Q 78 GS GatetoDrain Charge Q 55 GD f = 1 MHz 1.6 GateResistance R G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/15 V, V = 720 V, 40 ns d(ON) GS DS I = 60 A, R = 2.5 , D G Rise Time t 63 r Inductive Load TurnOff Delay Time t 55 d(OFF) Fall Time t 13 f TurnOn Switching Loss E 2025 J ON TurnOff Switching Loss E 201 OFF Total Switching Loss E 2226 TOT DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 153 A SD GS J Current Pulsed DrainSource Diode Forward Current I V = 5 V, T = 25C 472 A SDM GS J (Note 2) Forward Diode Voltage V V = 5 V, I = 30 A, T = 25C 3.8 V SD GS SD J www.onsemi.com 2