About F-RAM
Fujitsu Semiconductor F-RAM
F-RAM stands for Ferroelectric Random Access Memory and is used as a non-volatile RAM. It is a high-performance non-volatile RAM option that uses ferroelectric materials instead of conventional semiconductor transistor technology. These ferroelectric materials give F-RAM a much higher endurance level than conventional RAM, making it a great choice for applications that require frequent writes. That said, F-RAM also has significantly lower power consumption than both EEPROM and Flash, making it a great choice for applications that need low-power operation. F-RAM is also faster than other non-volatile memory solutions, providing fast storage speeds, high endurance levels and low power consumption. Ultimately, F-RAM helps to reduce the cost, complexity, and battery consumption associated with keeping data alive in storage.