X-On Electronics has gained recognition as a prominent supplier of MB85RS256BPNF-G-JNERE1 F-RAM across the USA, India, Europe, Australia, and various other global locations. MB85RS256BPNF-G-JNERE1 F-RAM are a product manufactured by Fujitsu Semiconductor. We provide cost-effective solutions for F-RAM, ensuring timely deliveries around the world.

MB85RS256BPNF-G-JNERE1 Fujitsu Semiconductor

MB85RS256BPNF-G-JNERE1 electronic component of Fujitsu Semiconductor
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Part No.MB85RS256BPNF-G-JNERE1
Manufacturer: Fujitsu Semiconductor
Category: F-RAM
Description: F-RAM 256kbit FRAM, SPI, 2.7V 3.6V - SOP8 T&R
Datasheet: MB85RS256BPNF-G-JNERE1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.07 ea
Line Total: USD 4.07 
Availability - 8271
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8271
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.07
10 : USD 3.74
100 : USD 3.355
250 : USD 3.344
500 : USD 3.223
1000 : USD 3.113
1500 : USD 2.948
3000 : USD 2.86
9000 : USD 2.805

   
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We are delighted to provide the MB85RS256BPNF-G-JNERE1 from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MB85RS256BPNF-G-JNERE1 and other electronic components in the F-RAM category and beyond.

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FUJITSU SEMICONDUCTOR DATA SHEET DS501-00021-4v0-E Memory FRAM 256 K (32 K 8) Bit SPI MB85RS256B DESCRIPTION MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS256B adopts the Serial Peripheral Interface (SPI). The MB85RS256B is able to retain data without using a back-up battery, as is needed for SRAM. 12 The memory cells used in the MB85RS256B can be used for 10 read/write operations, which is a significant 2 improvement over the number of read and write operations supported by Flash memory and E PROM. 2 MB85RS256B does not take long time to write data like Flash memories or E PROM, and MB85RS256B takes no wait time. FEATURES Bit configuration : 32,768 words 8 bits Serial Peripheral Interface : SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) Operating frequency : All commands except READ 33 MHz (Max) READ command 25 MHz (Max) 12 High endurance : 10 times / byte Data retention : 10 years ( + 85 C), 95 years ( + 55 C), over 200 years ( + 35 C) Operating power supply voltage : 2.7 V to 3.6 V Low power consumption : Operating power supply current 6 mA (Typ 33 MHz) Standby current 9 A (Typ) Operation ambient temperature range : -40 C to +85 C Package : 8-pin plastic SOP (FPT-8P-M02) RoHS compliant Copyright 2012-2015 FUJITSU SEMICONDUCTOR LIMITED 2015.6MB85RS256B PIN ASSIGNMENT (TOP VIEW) CS 1 8 VDD 2 7 SO HOLD 3 6 WP SCK 4 5 GND SI (FPT-8P-M02) PIN FUNCTIONAL DESCRIPTIONS Pin No. Pin Name Functional description Chip Select pin This is an input pin to make chip select. When CS is H level, device is in deselect 1CS (standby) status and SO becomes High-Z. Inputs from other pins are ignored for this time. When CS is L level, device is in select (active) status. CS has to be L level before inputting op-code. Write Protect pin This is a pin to control writing to a status register. The writing of status register (see 3WP STATUS REGISTER) is protected in related with WP and WPEN. See WRITING PROTECT for detail. Hold pin This pin is used to interrupt serial input/output without making chip deselect. When 7HOLD HOLD is L level, hold operation is activated, SO becomes High-Z, and SCK and SI be- come do not care. While the hold operation, CS shall be retained L level. Serial Clock pin 6SCK This is a clock input pin to input/output serial data. SI is loaded synchronously to a rising edge, SO is output synchronously to a falling edge. Serial Data Input pin 5SI This is an input pin of serial data. This inputs op-code, address, and writing data. Serial Data Output pin 2SO This is an output pin of serial data. Reading data of FRAM memory cell array and status register are output. This is High-Z during standby. 8 VDD Supply Voltage pin 4 GND Ground pin 2 DS501-00021-4v0-E

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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