Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comFM25V02A 256-Kbit (32K 8) Serial (SPI) F-RAM 256-Kbit (32K 8) Serial (SPI) F-RAM Features Functional Description 256-Kbit ferroelectric random access memory (F-RAM) The FM25V02A is a 256-Kbit nonvolatile memory employing an logically organized as 32K 8 advanced ferroelectric process. An F-RAM is nonvolatile and 14 High-endurance 100 trillion (10 ) read/writes performs reads and writes similar to a RAM. It provides reliable 151-year data retention (See Data Retention and Endurance data retention for 151 years while eliminating the complexities, on page 14) overhead, and system-level reliability problems caused by serial NoDelay writes flash, EEPROM, and other nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the FM25V02A performs write Very fast serial peripheral interface (SPI) operations at bus speed. No write delays are incurred. Data is Up to 40-MHz frequency written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the Sophisticated write-protection scheme product offers substantial write endurance compared with other Hardware protection using the Write Protect (WP) pin nonvolatile memories. The FM25V02A is capable of supporting 14 Software protection using Write Disable instruction 10 read/write cycles, or 100 million times more write cycles Software block protection for 1/4, 1/2, or entire array than EEPROM. Device ID These capabilities make the FM25V02A ideal for nonvolatile Manufacturer ID and Product ID memory applications requiring frequent or rapid writes. Examples range from data logging, where the number of write Low power consumption cycles may be critical, to demanding industrial controls where the 2.5-mA active current at 40 MHz long write time of serial flash or EEPROM can cause data loss. 150- A standby current 8- A sleep mode current The FM25V02A provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The Low-voltage operation: V = 2.0 V to 3.6 V DD FM25V02A uses the high-speed SPI bus, which enhances the Industrial temperature: 40 C to +85 C high-speed write capability of F-RAM technology. The device Packages incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product 8-pin small outline integrated circuit (SOIC) package revision. The device specifications are guaranteed over an 8-pin dual flat no-leads (DFN) package industrial range of 40 C to +85 C. Restriction of hazardous substances (RoHS) compliant For a complete list of related resources, click here. Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 32 K x 8 F-RAM Array Instruction Register 15 8 Address Register Counter SI SO Data OI/ Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-90865 Rev. *I Revised December 7, 2018