X-On Electronics has gained recognition as a prominent supplier of 5STP 04D4200 SCRs across the USA, India, Europe, Australia, and various other global locations. 5STP 04D4200 SCRs are a product manufactured by ABB. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

5STP 04D4200 ABB

5STP 04D4200 electronic component of ABB
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See Product Specifications
Part No.5STP 04D4200
Manufacturer: ABB
Category: SCRs
Description: Hockey-puck thyristor; 4.2kV; 0.47kA; 400mA; Ifsm:7.1kA
Datasheet: 5STP 04D4200 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 275.646 ea
Line Total: USD 275.65 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 275.646

   
Manufacturer
Product Category
Mounting
Type Of Semiconductor Component
Max Forward Impulse Current
Max Load Current
Max Off-State Voltage
Load Current
Gate Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 5STP 04D4200 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 5STP 04D4200 and other electronic components in the SCRs category and beyond.

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V = 4200 V DRM Phase Control Thyristor I = 470 A T(AV)M I = 740 A T(RMS) 3 I = 7.110 A TSM 5STP 04D4200 V = 1 V T0 r = 1.5 mW T Doc. No. 5SYA1025-07 Nov. 13 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking 1) Maximum rated values Parameter Symbol Conditions 5STP 04D4200 Unit f = 50 Hz, t = 10 ms, p T = 5125 C, Note 1 vj Max repetitive peak forward V DRM, 4200 V and reverse blocking voltage V RRM Critical rate of rise of dv/dt Exp. to 0.67V , T = 125 C 1000 V/s crit DRM vj commutating voltage Characteristic values Parameter Symbol Conditions min typ max Unit Forward leakage current I V , T = 125 C 100 mA DRM DRM vj Reverse leakage current I V , T = 125 C 100 mA RRM RRM vj Note 1: Voltage de-rating factor of 0.11% per C is applicable for T below +5 C. vj Mechanical data 1) Maximum rated values Parameter Symbol Conditions min typ max Unit Mounting force F 8 10 12 kN M 2 Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s Characteristic values Parameter Symbol Conditions min typ max Unit Weight m 0.3 kg Housing thickness H F = 10 kN, T = 25 C 26 26.6 mm M a Surface creepage distance D 25 mm S Air strike distance D 14 mm a 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.5STP 04D4200 On-state 1) Maximum rated values Parameter Symbol Conditions min typ max Unit Average on-state current I Half sine wave, Tc = 70 C 470 A T(AV)M RMS on-state current I 740 A T(RMS) Peak non-repetitive surge 3 t = 10 ms, T = 125 C, p vj I 7.110 A TSM current sine half wave, 2 3 2 V = V = 0 V, after surge D R Limiting load integral I t 25210 A s Peak non-repetitive surge 3 t = 10 ms, T = 125 C, p vj I 5.910 A TSM current sine half wave, 2 3 2 V = 0.6V , after surge Limiting load integral I t R RRM 17410 A s Characteristic values Parameter Symbol Conditions min typ max Unit On-state voltage V I = 500 A, T = 125 C 1.78 V T T vj Threshold voltage V 1 V (T0) I = 300 A - 1000 A, T = 125 C T vj Slope resistance r 1.5 mW T Tvj = 25 C 75 mA Holding current I H Tvj = 125 C 60 mA Tvj = 25 C 500 mA Latching current I L Tvj = 125 C 200 mA Switching 1) Maximum rated values Parameter Symbol Conditions min typ max Unit Cont. T = 125 C, vj 100 A/s f = 50 Hz Critical rate of rise of on-state I = 1500 A, TRM di/dt crit current V 0.67V , D DRM Cont. 1000 A/s I = 2 A, t = 0.5 s FG r f = 1 Hz T = 125 C, I = 2000 A, vj TRM Circuit-commutated turn-off V = 200 V, di /dt = -1.5 A/s, t R T 600 s q time V 0.67V , dv /dt = 20 V/s D DRM D Characteristic values Parameter Symbol Conditions min typ max Unit Reverse recovery charge Q 450 1400 As rr T = 125 C, I = 2000 A, vj TRM V = 200 V, di /dt = -1.5 A/s Reverse recovery current I R T 25 40 A RM T = 25 C, V = 0.4V vj D RM, Gate turn-on delay time t 3 s gd I = 2 A, t = 0.5 s FG r ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1025-07 Nov. 13 page 2 of 7

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