V = 4200 V DRM Phase Control Thyristor I = 470 A T(AV)M I = 740 A T(RMS) 3 I = 7.110 A TSM 5STP 04D4200 V = 1 V T0 r = 1.5 mW T Doc. No. 5SYA1025-07 Nov. 13 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking 1) Maximum rated values Parameter Symbol Conditions 5STP 04D4200 Unit f = 50 Hz, t = 10 ms, p T = 5125 C, Note 1 vj Max repetitive peak forward V DRM, 4200 V and reverse blocking voltage V RRM Critical rate of rise of dv/dt Exp. to 0.67V , T = 125 C 1000 V/s crit DRM vj commutating voltage Characteristic values Parameter Symbol Conditions min typ max Unit Forward leakage current I V , T = 125 C 100 mA DRM DRM vj Reverse leakage current I V , T = 125 C 100 mA RRM RRM vj Note 1: Voltage de-rating factor of 0.11% per C is applicable for T below +5 C. vj Mechanical data 1) Maximum rated values Parameter Symbol Conditions min typ max Unit Mounting force F 8 10 12 kN M 2 Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s Characteristic values Parameter Symbol Conditions min typ max Unit Weight m 0.3 kg Housing thickness H F = 10 kN, T = 25 C 26 26.6 mm M a Surface creepage distance D 25 mm S Air strike distance D 14 mm a 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.5STP 04D4200 On-state 1) Maximum rated values Parameter Symbol Conditions min typ max Unit Average on-state current I Half sine wave, Tc = 70 C 470 A T(AV)M RMS on-state current I 740 A T(RMS) Peak non-repetitive surge 3 t = 10 ms, T = 125 C, p vj I 7.110 A TSM current sine half wave, 2 3 2 V = V = 0 V, after surge D R Limiting load integral I t 25210 A s Peak non-repetitive surge 3 t = 10 ms, T = 125 C, p vj I 5.910 A TSM current sine half wave, 2 3 2 V = 0.6V , after surge Limiting load integral I t R RRM 17410 A s Characteristic values Parameter Symbol Conditions min typ max Unit On-state voltage V I = 500 A, T = 125 C 1.78 V T T vj Threshold voltage V 1 V (T0) I = 300 A - 1000 A, T = 125 C T vj Slope resistance r 1.5 mW T Tvj = 25 C 75 mA Holding current I H Tvj = 125 C 60 mA Tvj = 25 C 500 mA Latching current I L Tvj = 125 C 200 mA Switching 1) Maximum rated values Parameter Symbol Conditions min typ max Unit Cont. T = 125 C, vj 100 A/s f = 50 Hz Critical rate of rise of on-state I = 1500 A, TRM di/dt crit current V 0.67V , D DRM Cont. 1000 A/s I = 2 A, t = 0.5 s FG r f = 1 Hz T = 125 C, I = 2000 A, vj TRM Circuit-commutated turn-off V = 200 V, di /dt = -1.5 A/s, t R T 600 s q time V 0.67V , dv /dt = 20 V/s D DRM D Characteristic values Parameter Symbol Conditions min typ max Unit Reverse recovery charge Q 450 1400 As rr T = 125 C, I = 2000 A, vj TRM V = 200 V, di /dt = -1.5 A/s Reverse recovery current I R T 25 40 A RM T = 25 C, V = 0.4V vj D RM, Gate turn-on delay time t 3 s gd I = 2 A, t = 0.5 s FG r ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1025-07 Nov. 13 page 2 of 7