NTE5360 NTE

NTE5360 Silicon Controlled Rectifier (SCR) for High Speed Switching, 600V, 35 Amp, TO48 Absolute Maximum Ratings and Electrical Characteristics: Repetitive Peak Off State Voltage (Gate Open, T = +110C), V . . . . . . . . . . . . . . . . . . . . . . 600V J DRM Repetitive Peak Reverse Voltage (Gate Open, T = +110C), V . . . . . . . . . . . . . . . . . . . . . . 600V J RRM RMS On State Current (T = +80C, 360 Conduction Angle), I . . . . . . . . . . . . . . . . . . . . 40A C T(RMS) Peak Surge (NonRepetitive) On State Current (One Cycle, 50 or 60Hz), I . . . . . . . . . . . . 400A TSM Peak Gate Trigger Current (3s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GTM Peak Gate Power (I I ), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Maximum Repetitive Peak Off State Current (At V , T = +110C), I . . . . . . . . . . . . . . 1.0mA DRM C DRM Maximum Repetitive Peak Reverse Current (At V , T = +110C), I . . . . . . . . . . . . . . . 1.0mA RRM C RRM Maximum Peak On State Voltage (T = +25C, I = 40A), V . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V C T TM Maximum DC Holding Current (Gate Open, T = +25C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA C H Critical Rate of Rise of OffState Voltage (Gate Open, T = +110C), dv/dt . . . . . . . . . . . . 200V/s C Maximum DC Gate Trigger Current (V = 12V, R = 60, T = +25C), I . . . . . . . . . . . . . . 25mA A L C GT Maximum DC Gate Trigger Voltage (V = 12V, R = 60, T = +25C), V . . . . . . . . . . . . . . . 2.0V A L C GT gate Controlled Turn On Time (For t and t , I = 150mA, T = +25C), t . . . . . . . . . . . . . . 2.5s d r GT C gt Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4C/W thJC.562 (14.28) Max Gate Cathode 1.193 (30.33) Max .200 (5.08) Max .453 (11.5) Anode Max 1/428 UNF2A